Dependence of Argon Gas Pressure on Properties of Ga Doped ZnO Films Deposited by RF Sputtering

MA Xian-mei; JING Hai; WANG Yong-gang; WANG Long-yan; WANG Zhong-jian; MA Kai

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Dependence of Argon Gas Pressure on Properties of Ga Doped ZnO Films Deposited by RF Sputtering

Device Technology & Physics | 更新时间：2020-08-12

- Dependence of Argon Gas Pressure on Properties of Ga Doped ZnO Films Deposited by RF Sputtering
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 6, Pages: 836-839(2009)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 北方液晶工程研究开发中心,吉林长春,130031
  3. 中国科学院长春光学精密机械与物理研究所,吉林长春 130033,E-mail:maxianmei509@126.com
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.2+1
- Received：25 April 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 December 2009，
  
  Published：30 December 2009
- 稿件说明：
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马仙梅;荆海;王永刚;王龙彦;王中健;马凯. 氩气压强对溅射法制备Ga掺杂ZnO薄膜性能的影响[J]. 液晶与显示, 2009,24(6): 836-839

MA Xian-mei;JING Hai;WANG Yong-gang;WANG Long-yan;WANG Zhong-jian;MA Kai. Dependence of Argon Gas Pressure on Properties of Ga Doped ZnO Films Deposited by RF Sputtering[J]. 液晶与显示, 2009,24(6): 836-839
马仙梅;荆海;王永刚;王龙彦;王中健;马凯. 氩气压强对溅射法制备Ga掺杂ZnO薄膜性能的影响[J]. 液晶与显示, 2009,24(6): 836-839 DOI：

MA Xian-mei;JING Hai;WANG Yong-gang;WANG Long-yan;WANG Zhong-jian;MA Kai. Dependence of Argon Gas Pressure on Properties of Ga Doped ZnO Films Deposited by RF Sputtering[J]. 液晶与显示, 2009,24(6): 836-839 DOI：

摘要

采用射频磁控溅射法在玻璃衬底上制备了高质量的Ga掺杂ZnO透明导电薄膜(GZO)。通过X射线衍射、原子力显微镜、四探针电导率测试仪等表征方法研究了溅射气压对薄膜结晶特性及导电性能的影响。所制备的GZO薄膜是具有六角纤锌矿结构的多晶薄膜

最佳择优取向为(002)方向。随着溅射气压的增大

薄膜方块电阻与薄膜电阻率均随之增大。最小方块电阻可达17.6 /□

最小薄膜电阻率为7.310

-4

cm。另外

GZO薄膜在可见光范围内的透过率达到了90%以上。

Abstract

Highly conducting and transparent gallium doped zinc oxide (GZO) thin films had been deposited by r.f. magnetron sputtering method on glass substrates. The dependence of GZO films crystal and conducting properties on argon gas pressure was investigated by X-ray diffraction (XRD)

atomic force microscopy (AFM) and four point probe methods. The obtained GZO films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. As argon gas pressure increased

the sheet resistance and resistivity both increased with the lowest value of 17.6 /□ and 7.310

-4

respectively. In addition

the transmittance of the GZO films in the visible range was over 90%.

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Keywords

references

. Choi B H, Im H B, Song J S, et al. Optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f. sputtering [J]. Thin Solid Films, 1990, 193:712-720.

. Assuno V, Fortunato E, Marques A, et al. Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature [J]. Thin Solid Films, 2003, 427:401-405.

. 余旭浒,马瑾,计峰,等. 薄膜厚度对ZnO:Ga透明导电膜性能的影响[J]. 功能材料 ,2005, 36 (2):241-243.

. 李素敏,赵玉涛,张钊. 磁控溅射制备柔性衬底ZnO:Ga透明导电膜微结构及性能研究[J]. 太阳能学报, 2007, 28 (11):1233-1238.

. Hirata G A, McKittrick J, Cheeks T, et al. Synthesis and optelectronic characterization of gallium doped zinc oxide transparent [J]. Thin Solid Films, 1996, 288:29-31.

. Cheong K Y, Muti N, Ramanan S R. Electrical and optical studies of ZnO ∶ Ga thin films fabricated via the sol-gel technique [J]. Thin Solid Films, 2002, 410:142-146.

. Hu Jianhua, Gordon R G. Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium [J]. J. Appl. Phys., 1992, 72(11):5381-5392.

. Ataev B M, Bagamadova A M, Djabrailov A M, et al. Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVD [J]. Thin Solid Films,1995, 260:19-20.

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