Progress in Ion Beam Modification of ZnO Thin Films

XUE Shu-wen; MEI Fang; XIAO Shi-fa; HUANG Zi-kang; MO Dong

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Progress in Ion Beam Modification of ZnO Thin Films

Device Technology & Physics | 更新时间：2020-08-12

- Progress in Ion Beam Modification of ZnO Thin Films
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 3, Pages: 367-371(2009)
- 作者机构：
  
  湛江师范学院物理系,广东湛江 524048,E-mail:xueshuwen@263.net
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.3
- Received：07 November 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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薛书文;梅芳;肖世发;黄子康;莫东. ZnO薄膜离子注入改性的研究进展[J]. 液晶与显示, 2009,24(3): 367-371

XUE Shu-wen;MEI Fang;XIAO Shi-fa;HUANG Zi-kang;MO Dong. Progress in Ion Beam Modification of ZnO Thin Films[J]. 液晶与显示, 2009,24(3): 367-371
薛书文;梅芳;肖世发;黄子康;莫东. ZnO薄膜离子注入改性的研究进展[J]. 液晶与显示, 2009,24(3): 367-371 DOI：

XUE Shu-wen;MEI Fang;XIAO Shi-fa;HUANG Zi-kang;MO Dong. Progress in Ion Beam Modification of ZnO Thin Films[J]. 液晶与显示, 2009,24(3): 367-371 DOI：

摘要

ZnO是一种在短波长光电器件领域有巨大应用价值的Ⅱ-Ⅵ族化合物半导体材料

离子注入是常用的半导体掺杂技术

文章综述了国内外近年来离子注入技术在ZnO的n、p型掺杂等方面的研究进展。

Abstract

Zinc oxide (ZnO)

an important Ⅱ-Ⅵ semiconductor

has potential applications in short wavelength optoelectronics. Ion implantation is a conventional technique widely used in semiconductor industry. This paper summarized the developments and applications of ion implantation in fabrication of n- or p-type ZnO

etc.

关键词

Keywords

references

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