Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors

WANG Zhong-jian; WANG Long-yan; MA Xian-mei; FU Guo-zhu; JING Hai

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Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors

Device Technology & Physics | 更新时间：2020-08-12

- Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 2, Pages: 210-216(2009)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所北方液晶工程研究开发中心,吉林长春 130031,E-mail:wangzj
  3. @. com,163
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN911.72
- Received：04 August 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 April 2009，
  
  Published：30 April 2009
- 稿件说明：
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王中健;王龙彦;马仙梅;付国柱;荆海. 透明非晶态氧化物半导体薄膜晶体管的研究进展[J]. 液晶与显示, 2009,24(2): 210-216

WANG Zhong-jian;WANG Long-yan;MA Xian-mei;FU Guo-zhu;JING Hai. Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors[J]. 液晶与显示, 2009,24(2): 210-216
王中健;王龙彦;马仙梅;付国柱;荆海. 透明非晶态氧化物半导体薄膜晶体管的研究进展[J]. 液晶与显示, 2009,24(2): 210-216 DOI：

WANG Zhong-jian;WANG Long-yan;MA Xian-mei;FU Guo-zhu;JING Hai. Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors[J]. 液晶与显示, 2009,24(2): 210-216 DOI：

摘要

透明非晶态氧化物半导体薄膜晶体管(TAOS-TFT)以其诸多优势受到研究人员的青睐

最近几年发展迅速。文章以传统薄膜晶体管做对照

详细介绍了TAOS-TFT的原理、结构和性能

总结出TAOS-TFT相对于Si基TFT具有制备温度低、均一性好、迁移率高、对可见光全透明和阈值电压低等5方面的优势

指出了TAOS-TFT在进一步实用化过程中所面临的几个重要问题

其中最为重要的是需要尽快建立自身的集约化物理模型。

Abstract

Transparent amorphous oxide semiconductor thin film transistor (TAOS-TFT) are attracting interest for its several advantages for applications in the new generation display technology. Especially in recent years it develops rapidly. In this paper

five major advantages about TAOS-TFT are elaborated in detail by means of the contrast of traditional thin film transistors.For example

the low tempe-rature of fabrication

good homogeneity

the high mobility

the full transparency to visible light

the good performance of combination property of devices. Several crucial problems are also indicated about TAOS-TFT

such as

the in-depth study of metals component in mixed-oxide films

the further study of the influence of external environment (including bending stress

temperature

humidity

etc.) upon performance of the device

the further optimization for the preparation of the device

developing compact model with its own characteristics

and the requirements of the development and utilization of the metal element with a low crustal abundance.

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Keywords

references

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