Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems

WANG Cai-feng; LI Qing-shan; HU Bo

doi:null

您当前的位置：

首页 >

文章列表页 >

Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems

Material Physics & Chemistry | 更新时间：2020-08-12

- Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 1, Pages: 34-37(2009)
- 作者机构：
  
  1. 滨州学院物理与电子科学系,山东滨州 256603,E-mail: cfwang_2004@163.com
  2. 鲁东大学物理系,山东烟台,264025
  3. 滨州学院飞行学院,山东滨州,256603
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.4+.1;O484.4+.2;TN383+.2
- Received：12 July 2008，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2009，
  
  Published：20 February 2009
- 稿件说明：
移动端阅览
王彩凤;李清山;胡波. 硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较[J]. 液晶与显示, 2009,24(1): 34-37

WANG Cai-feng;LI Qing-shan;HU Bo. Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems[J]. 液晶与显示, 2009,24(1): 34-37
王彩凤;李清山;胡波. 硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较[J]. 液晶与显示, 2009,24(1): 34-37 DOI：

WANG Cai-feng;LI Qing-shan;HU Bo. Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems[J]. 液晶与显示, 2009,24(1): 34-37 DOI：

摘要

用脉冲激光沉积法在相同孔隙率的多孔硅(Porous Silicon

PS)衬底上生长了ZnS薄膜和ZnO薄膜

在室温下对ZnS/PS和ZnO/PS的光学和电学性质进行了比较。结果发现

ZnS/PS和ZnO/PS在可见光区450~700 nm都有一个较宽的光致发光谱带

呈现较强的白光发射

但ZnS/PS体系的白光发射性能要优于ZnO/PS体系的发光性能。从二者的

I-V

特性曲线来看

ZnS/PS异质结呈现出与普通二极管相似的整流特性

而ZnO/PS异质结的整流特性与普通二极管不同

其反向电流不饱和。

Abstract

ZnS films and ZnO films were prepared on porous silicon (PS) substrates with same porosity by pulsed laser deposition (PLD)

and the optical and electrical properties of ZnS/PS and ZnO/PS systems were compared at room temperature. The results showed that

there was a broad photoluminescence band from 450 nm to 700 nm in the visible region of both ZnS/PS and ZnO/PS composites

exhibiting intensive white light emission. However

the white light emission performance of ZnS/PS composite was better than that of ZnO/PS composite. Based on the

I-V

characteristics

ZnS/PS heterojunction exhibited the rectifying junction behavior

but the

I-V

characteristic of the ZnO/PS heterostructure was different from that of the common diode

whose reverse current was not saturated.

关键词

Keywords

references

. 程松华,曾祥斌. ZnO基薄膜晶体管的研究 [J]. 液晶与显示 , 2006, 21(5):515-520.

. 明楠,李岚,张晓松,等.球形ZnO的微波辅助合成及光谱研究 [J]. 发光学报 , 2007, 28(3):425-428.

. Vanheusden K, Warren W L, Seager C H, et al. Mechanisms behind green photoluminescence in ZnO phosphor powders [J]. J. Appl. Phys., 1996, 79(10): 7983-7986.

. Zhang S B, Wei S H, Zunger A. Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO [J]. Phys. Rev. B, 2001, 63:075205.

. Yano S, Schroeder R, Sakai H, et al. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition [J]. Appl. Phys. Lett., 2003, 82(13):2026-2028.

. Morozova N K, Karetnikov I A, Plotnichenko V G, et al. Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure [J]. Semiconductors,2004,38(1):36-41.

. 王晓静,李清山.多孔硅研究的发展 [J]. 液晶与显示 , 2003, 18(6):421-427.

. 王彩凤, 李清山, 张立春,等. 退火对ZnS/PS复合体系光致发光特性的影响 [J]. 发光学报, 2007, 28(4):541-545.

. Gokarna A, Bhoraskar S V, Pavaskar N R, et al. Optoelectronic characterization of porous silicon/CdS and ZnS systems [J]. Phys. Stat. Sol. (A), 2000, 182:175-179.

. Xu Dongsheng, Guo Guolin, Gui Linlin. Controlling growth and field emission property of aligned carbon nanotubes on porous silicon [J]. Appl. Phys. Lett., 1999, 75(4):481-484.

. Zhang P, Kim P S, Sham T K. Nanostructured CdS prepared on porous silicon substrate:structure, electronic, and optical properties [J]. J. Appl. Phys., 2002, 91(9):6038-6043.

. Gokarna A, Pavaskar N R, Sathaye S D, et al. Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon [J]. J. Appl. Phys., 2002, 92(4):2118-2124.

. Liu Y L, Liu Y C, Yang H, et al. The optical properties of ZnO films grown on porous Si templates [J]. J. Phys. D:Appl. Phys., 2003, 36:2705-2708.

. Nasrallah T B, Amlouk M, Bernede J C, et al. Structure and morphology of sprayed ZnSthin films [J]. Phys. Stat. Sol., 2004, 201(14):3070-3076.

. WANG Cai-feng, LI Qing-shan, LV Lei, et al. Study of white light emission from ZnS/PS composite system [J]. Chin. Opt. Lett., 2007, 5(9):546-548.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Relationship between duty cycle and color difference based on different color conversion methods

Research progress of quantum dots in display applications

Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser

Effects of ZnO nanostructures on the alignment control of liquid crystals

Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures

Related Author

XIE Pei-chuan

YANG Mei-hui

ZHONG Wen-kui

LIN Wei-han

HU Wen-dang

CHEN Li-chuang

LIU Chuan-biao

HUANG Wen-jun

Related Institution

Shenzhen KONKA Electronic Technology Co.， Ltd.

KONKA Group Co.， Ltd.

Department of Electronic and Electrical Engineering， Southern University of Science and Technology

College of Materials and Metallurgy， Guizhou University

College of Physics and Electronic Engineering， Hainan Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰