Low Resistant Metal for Thin Film Transistors

LIU Xiang; CHEN Xu; XIE Zhen-yu; GAO Hao-ran; WANG Wei

doi:null

您当前的位置：

首页 >

文章列表页 >

Low Resistant Metal for Thin Film Transistors

Device Technology & Physics | 更新时间：2020-08-12

- Low Resistant Metal for Thin Film Transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 4, Pages: 533-536(2009)
- 作者机构：
  
  北京京东方光电科技有限公司,北京 100176, E-mail:skeyapple @126.com
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN321+.5
- Received：19 January 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 August 2009，
  
  Published：30 August 2009
- 稿件说明：
移动端阅览
刘翔;陈旭;谢振宇;高浩然;王威. 使用低电阻金属铝制造薄膜晶体管阵列信号电极[J]. 液晶与显示, 2009,24(04): 533-536

LIU Xiang;CHEN Xu;XIE Zhen-yu;GAO Hao-ran;WANG Wei. Low Resistant Metal for Thin Film Transistors[J]. 液晶与显示, 2009,24(04): 533-536
刘翔;陈旭;谢振宇;高浩然;王威. 使用低电阻金属铝制造薄膜晶体管阵列信号电极[J]. 液晶与显示, 2009,24(04): 533-536 DOI：

LIU Xiang;CHEN Xu;XIE Zhen-yu;GAO Hao-ran;WANG Wei. Low Resistant Metal for Thin Film Transistors[J]. 液晶与显示, 2009,24(04): 533-536 DOI：

摘要

金属电阻是影响大尺寸TFT-LCD信号延迟的关键因素。研究了利用低电阻率金属Al制作大尺寸TFT阵列信号线的生产工艺

发现在完成有源半导体层刻蚀后残留的少量Cl

会在后续工艺中对金属Al造成腐蚀

严重地影响了产品的性能。通过优化刻蚀工艺

采用活性更高的SF

去除刻蚀有源半导体层时残留的少量Cl

避免了金属Al腐蚀的发生。

Abstract

Low resistant metal is one of key factors in delay-time of large TFT-LCD. In this article low resistant metal aluminum has been investigated. After a-Si island etch process

it is found that remained Cl

had eroded aluminum. This has severity influence on products. By optimizing the etch process

more active SF

can remove remained Cl

in a-Si island etch process. So aluminum erodibility can be avoided.

关键词

Keywords

references

. 黄锡珉. 液晶显示技术的发展轨迹 [J]. 液晶与显示 ,2003,18(1):1-6.

. 应根裕. 平板显示技术 [M]. 北京:人民邮电出版社,2003.

. Song Jean H, Kwon D J, Kim S G, et al. Advanced four-mask process architecture for the a-Si TFT array manufacturing method [J]. SID Symposium Digest of Technical Paper, 2000, 42(2):1011-1013.

. Seo H S, Kim I W, Lee G H, et al. Hillock-free Al-gate materials using stress-absorbing buffer layer for large-area AMLCDs [J]. SID Symposium Digest of Technical Paper, 1996,22(3):1-5.

. Hong MunPyo, Roh Nam-Seok, Hong Wan-Shick, et al. New approaches to process simplification for large area and high resolution TFT-LCD [J]. SID Symposium Digest of Technical Paper, 2001,44(1):1-4.

Views

190

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Mechanism analysis and suppression measures for gate data short defects in oxide TFT

Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors

Research progress on crystalline IGZO thin film transistor

Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips

Effect of sputtering power on properties of W-doped ZnO thin film transistors

Related Author

LIU Dan

FAN Xiaojun

CEHN Wei

LIU Wei

LIU Chuan

DU Hongwei

YANG Sheng

WU Xu

Related Institution

BOE Technology Group Co. Ltd.

School of Electronics and Information Technology， Sun Yat-sen University

Lennovo PCSD Quality Technology Committee

Chongqing BOE Optoelectronics Technology Co. Ltd.

Department of Electronic Engineering， Shanghai Jiao Tong University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰