Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

ZHANG Xin-an; ZHANG Jing-wen; ZHANG Wei-feng; HOU Xun

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Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

Device Technology & Physics | 更新时间：2020-08-12

- Effect of Annealing Temperature on Electrical Properties of ZnO-TFT
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 4, Pages: 557-561(2009)
- 作者机构：
  
  1. 河南大学物理与电子学院,河南开封 475004,E-mail:xinanzhang@henu.edu.cn
  2. 西安交通大学陕西省信息光子技术重点实验室,陕西西安,710049
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472+.4
- Received：28 March 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 August 2009，
  
  Published：30 August 2009
- 稿件说明：
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张新安;张景文;张伟风;侯洵;. 退火温度对ZnO薄膜晶体管电学性能的影响[J]. 液晶与显示, 2009,24(04): 557-561

ZHANG Xin-an;ZHANG Jing-wen;ZHANG Wei-feng;HOU Xun;. Effect of Annealing Temperature on Electrical Properties of ZnO-TFT[J]. 液晶与显示, 2009,24(04): 557-561
张新安;张景文;张伟风;侯洵;. 退火温度对ZnO薄膜晶体管电学性能的影响[J]. 液晶与显示, 2009,24(04): 557-561 DOI：

ZHANG Xin-an;ZHANG Jing-wen;ZHANG Wei-feng;HOU Xun;. Effect of Annealing Temperature on Electrical Properties of ZnO-TFT[J]. 液晶与显示, 2009,24(04): 557-561 DOI：

摘要

采用光刻剥离法和射频磁控溅射技术在带有热氧化层的硅衬底上制备了以氧化锌(ZnO)为沟道层的薄膜晶体管(ZnO-TFT)。研究了不同温度退火处理对ZnO-TFT电学性能的影响

发现随着ZnO薄膜退火温度的增加

ZnO-TFT的阈值电压减小

电子的场效应迁移率增大。用原子力显微镜(AFM)对ZnO薄膜的微区结构进行观察

发现ZnO薄膜的平均粒径随退火温度的增加而增大

表明ZnO-TFT电学性质和沟道层薄膜晶粒大小密切相关。

Abstract

ZnO-TFT was fabricated on thermally oxide silicon substrates by RF magnetron sputtering and lift-off technology. The effect of annealing temperature on electrical properties of devices was investigated which revealing that the threshold voltage decreased and the field effect mobility increased with the increase of annealing temperature. The surface morphology of the ZnO films were characterized by atomic force microscopy

which showed that the average grain size increased with the increase of annealed temperature. The results indicate that there are close correlation between electrical properties of ZnO-TFT and the grain size of the channel layer.

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Keywords

references

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