Preparation and Characterization of Transparent Conducting Films ZnO :Zr

ZHANG Hua-fu; LEI Cheng-xin; LIU Han-fa; YUAN Chang-kun

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Preparation and Characterization of Transparent Conducting Films ZnO :Zr

Device Technology & Physics | 更新时间：2020-08-12

- Preparation and Characterization of Transparent Conducting Films ZnO :Zr
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 1, Pages: 61-65(2009)
- 作者机构：
  
  山东理工大学物理与光电信息技术学院,山东淄博 255049,E-mail:huabaozhang@126.com
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.92;TN304.2+1
- Received：06 August 2008，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2009，
  
  Published：20 February 2009
- 稿件说明：
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张化福;类成新;刘汉法;袁长坤. 透明导电薄膜ZnO : Zr的制备及特性研究[J]. 液晶与显示, 2009,24(1): 61-65

ZHANG Hua-fu;LEI Cheng-xin;LIU Han-fa;YUAN Chang-kun. Preparation and Characterization of Transparent Conducting Films ZnO :Zr[J]. 液晶与显示, 2009,24(1): 61-65
张化福;类成新;刘汉法;袁长坤. 透明导电薄膜ZnO : Zr的制备及特性研究[J]. 液晶与显示, 2009,24(1): 61-65 DOI：

ZHANG Hua-fu;LEI Cheng-xin;LIU Han-fa;YUAN Chang-kun. Preparation and Characterization of Transparent Conducting Films ZnO :Zr[J]. 液晶与显示, 2009,24(1): 61-65 DOI：

摘要

利用直流磁控溅射法在玻璃衬底上制备出了可见光透过率高、电阻率低的ZnO : Zr(ZZO)透明导电薄膜。讨论了溅射功率对ZZO薄膜结构、形貌及光电性能的影响。研究结果表明

溅射功率对ZZO薄膜的结构和电学性能有很大影响。实验制备的ZZO薄膜为六角纤锌矿结构的多晶薄膜

且具有垂直于衬底方向的

轴择优取向。在溅射功率为115 W时

ZZO薄膜的电阻率具有最小值1.910

-3

其霍尔迁移率和载流子浓度分别为18.7 cm

-1

和2.0710

-3

。所制备ZZO薄膜样品具有良好的附着性能

其可见光区平均透过率均超过92％。

Abstract

Transparent conducting zirconium-doped zinc oxide (ZZO) films with high transparency and relatively low resistivity have been successfully prepared by direct current magnetron sputtering at room temperature. The effect of sputtering power on the structures

morphologies and optic-electronic properties of ZZO films was investigated in detail. The experimental results show that sputtering power is an important factor to the crystal structure and electronic properties of ZZO films. All the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the

-axis. At the optimal sputtering power of 115 W

the lowest resistivity achieved is 1.910

-3

cm with a hall mobility of 18.7 cm

-1

and a carrier concentration of 2.0710

-3

. All the films present a high transmittance of above 92% in the visible range. ZZO films with high transparency and relatively low resistivity deposited at room temperature will be widely used in microelectronic devices such as liquid crystal display

film solar cells and so on.

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Keywords

references

. Kim H, Horwitz J S, Kim W H, et al. Doped ZnO thin film as anode materials for organic light-emitting diodes [J]. Thin Solid Films, 2002,420-421:539-543.

. 徐小丽,马书懿,陈彦,等.氧化压对磁控溅射制备ZnO薄膜的结构及光学特性的影响 [J]. 发光学报 , 2007, 28(5):730-735.

. Paul G K, Bandyopadhyay S B, Sen S K, et al. Structural, optical and electrical studies on sol-gel deposited Zr doped ZnO films [J].Materials Chem. and Phys., 2003,79(1):71-75.

. Lv M S, Xiu X W, Pang Z Y, et al. Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering [J]. Appl. Surface Science, 2006,252(16):5687-5692.

. 薛建设, 林炜, 马瑞新,等. (Al,Zr) 共掺杂ZnO 透明导电薄膜的结构以及光电性能研究 [J]. 液晶与显示, 2007, 22(5):560-564.

. Coutal C, Azema A, Roustan J C. Fabrication and characterization of ITO thin films deposited by excimer laser evaporation[J].Thin Solid Films, 1996, 28(1-2): 248-253.

. Qadri S B, Kim H, Khan H R, et al. Transparent conducting films of In2O3-ZrO2, SnO2-ZrO2 and ZnO-ZrO2 [J].Thin Solid Films, 2000,377-378:750-754.

. Lv M S, Pang Z Y, Xiu X W, et al. Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering [J]. Chin. Phys., 2007, 16(2):548-552.

. 余旭浒,马瑾,计峰,等.薄膜厚度对ZnO ∶ Ga透明导电膜性能的影响 [J]. 功能材料料, 2005, 36(2):241-243.

. Lv M S, Xiu X W, Pang Z Y, et al. Transparent conducting zirconium-doped zinc oxide films prepared by rf magnetron sputtering [J]. Appl. Surface Science, 2005,252(5):5687-5692.

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Related Author

GUO Mei-xia

LIU Han-fa

ZHANG Hua-fu

YUAN Yu-zhen

YUAN Chang-kun

LEI Cheng-xin

YUAN Chang-kun

YUAN Yu-zhen

Related Institution

School of Science, Shandong University of Technology

School of Science, Shandong University of Technology, Zibo 255049, China,E-mail:liuhanfa@126.

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School of Electrical and Computer Science， Jilin Jianzhu University

Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education， Jilin Jianzhu University

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