Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO : Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature

REN Ming-fang; WANG Hua; XU Ji-wen; YANG Ling

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Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO : Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature

Device Technology & Physics | 更新时间：2020-08-12

- Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO : Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 1, Pages: 52-56(2009)
- 作者机构：
  
  1. 桂林电子科技大学信息材料科学与工程系, 广西桂林 541004, E-mail: wh65@guet.edu.cn
  2. 桂林电子科技大学广西信息材料重点实验室,广西桂林 541004
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484
- Received：04 August 2008，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2009，
  
  Published：20 February 2009
- 稿件说明：
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任明放;王华;许积文;杨玲. 掺杂及工艺条件对室温制备ZnO : Al性能的影响[J]. 液晶与显示, 2009,24(1): 52-56

REN Ming-fang;WANG Hua;XU Ji-wen;YANG Ling. Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO : Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature[J]. 液晶与显示, 2009,24(1): 52-56
任明放;王华;许积文;杨玲. 掺杂及工艺条件对室温制备ZnO : Al性能的影响[J]. 液晶与显示, 2009,24(1): 52-56 DOI：

REN Ming-fang;WANG Hua;XU Ji-wen;YANG Ling. Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO : Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature[J]. 液晶与显示, 2009,24(1): 52-56 DOI：

摘要

采用直流磁控溅射工艺

在室温条件下制备了ZnO : Al(ZAO)薄膜

研究了Al掺杂量和溅射工艺参数等对ZAO薄膜光电性能的影响。结果表明:Al掺杂量和溅射工艺参数均对薄膜的电阻率有显著影响

在Al掺杂质量分数为3%、溅射功率为100 W以及Ar压强为1.5 Pa的条件下

室温溅射淀积的ZAO薄膜可获得1.410

-3

cm的最小电阻率;Al掺杂量和工艺参数对薄膜的透光率均无明显的影响

薄膜的平均透光率在86~90％

但随Al掺杂量和溅射功率的增加

薄膜的截止吸收边均向短波长方向移动。对薄膜优值因子的分析表明

适合采用的Ar压强值在0.6~2.0 Pa。

Abstract

ZnO : Al (ZAO) thin films based on Al doped ZnO ceramic target were prepared on slide glass substrates by DC magnetron sputtering at room temperature. The effects of Al doping content and sputtering parameter on electrical and optical properties of ZAO thin films were investigated. The experimental results show that both the Al content and process parameters have a great influence on electrical property. When the Al content is 3%

the sputtering power is 100 W

the argon gas pressure is 1.5 Pa

ZAO thin films have a lowest resistivity of 1.410

-3

cm. The Al doping content and process parameters had a little influence on transmittance

and the average transmittances of ZAO thin films were from 86% to 90%

but the absorption edge has a blue shift with the increase of doping level and argon gas pressure. According to the analyses of FOM (figure of merit ) of ZAO

an argon pressure of 0.6~2.0 Pa is appropriate for ZAO thin films deposited by DC magnetron sputtering at room temperature.

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Keywords

references

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