{"defaultlang":"zh","titlegroup":{"articletitle":[{"lang":"zh","data":[{"name":"text","data":"Micro-LED显示及其驱动技术的研究进展"}]},{"lang":"en","data":[{"name":"text","data":"Research progress of Micro-LED display and its driving technology"}]}]},"contribgroup":{"author":[{"name":[{"lang":"zh","surname":"周","givenname":"律","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHOU","givenname":"Lü","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":"1"},{"rid":"aff2","text":"2"}],"role":["first-author"],"bio":[{"lang":"zh","text":["周  律（1999—），女，湖南衡阳人，硕士研究生，2021年于湖南文理学院芙蓉学院获得学士学位，主要从事Mini/Micro-LED制备工艺及驱动技术研究。E-mail：zhoulv2021@163.com"],"graphic":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241759&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241761&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241760&type=","width":"20.95499992","height":"33.01999664","fontsize":""}],"data":[[{"name":"text","data":"周  律"},{"name":"text","data":"（1999—），女，湖南衡阳人，硕士研究生，2021年于湖南文理学院芙蓉学院获得学士学位，主要从事Mini/Micro-LED制备工艺及驱动技术研究。E-mail："},{"name":"text","data":"zhoulv2021@163.com"}]]}],"email":"zhoulv2021@163.com","deceased":false},{"name":[{"lang":"zh","surname":"郑","givenname":"华","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHENG","givenname":"Hua","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":"1"},{"rid":"aff2","text":"2"}],"role":["corresp"],"corresp":[{"rid":"cor1","lang":"zh","text":"E-mail：zhenghua@dgut.edu.cn","data":[{"name":"text","data":"E-mail：zhenghua@dgut.edu.cn"}]}],"bio":[{"lang":"zh","text":["郑  华（1980—），男，湖北鄂州人，博士，副教授，2011年于华南理工大学获得博士学位，研究方向包括光电材料与器件、新型显示技术（LCD、OLED、QLED、Mini/Micro-LED等）。E-mail：zhenghua@dgut.edu.cn"],"graphic":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241762&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241765&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241764&type=","width":"22.18266296","height":"33.02000427","fontsize":""}],"data":[[{"name":"text","data":"郑  华"},{"name":"text","data":"（1980—），男，湖北鄂州人，博士，副教授，2011年于华南理工大学获得博士学位，研究方向包括光电材料与器件、新型显示技术（LCD、OLED、QLED、Mini/Micro-LED等）。E-mail："},{"name":"text","data":"zhenghua@dgut.edu.cn"}]]}],"email":"zhenghua@dgut.edu.cn","deceased":false},{"name":[{"lang":"zh","surname":"张","givenname":"声浩","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHANG","givenname":"Sheng-hao","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":"1"},{"rid":"aff2","text":"2"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"李","givenname":"华丹","namestyle":"eastern","prefix":""},{"lang":"en","surname":"LI","givenname":"Hua-dan","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":"1"},{"rid":"aff3","text":"3"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"张","givenname":"耿","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHANG","givenname":"Geng","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":"1"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"张","givenname":"绍强","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHANG","givenname":"Shao-qiang","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":"1"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"许","givenname":"伟","namestyle":"eastern","prefix":""},{"lang":"en","surname":"XU","givenname":"Wei","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff4","text":"4"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"许","givenname":"恒荣","namestyle":"eastern","prefix":""},{"lang":"en","surname":"XU","givenname":"Heng-rong","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff5","text":"5"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"肖","givenname":"俊林","namestyle":"eastern","prefix":""},{"lang":"en","surname":"XIAO","givenname":"Jun-lin","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff5","text":"5"}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"宁","givenname":"洪龙","namestyle":"eastern","prefix":""},{"lang":"en","surname":"NING","givenname":"Hong-long","namestyle":"eastern","prefix":""}],"stringName":[],"aff":[{"rid":"aff4","text":"4"}],"role":[],"deceased":false}],"aff":[{"id":"aff1","intro":[{"lang":"zh","label":"1","text":"东莞理工学院 电子工程与智能化学院， 广东 东莞 523808","data":[{"name":"text","data":"东莞理工学院 电子工程与智能化学院， 广东 东莞 523808"}]},{"lang":"en","label":"1","text":"School of Electronic Engineering and Intelligence， Dongguan University of Technology，Dongguan 523808，China","data":[{"name":"text","data":"School of Electronic Engineering and Intelligence， Dongguan University of Technology，Dongguan 523808，China"}]}]},{"id":"aff2","intro":[{"lang":"zh","label":"2","text":"东莞理工学院 机械工程学院， 广东 东莞 523808","data":[{"name":"text","data":"东莞理工学院 机械工程学院， 广东 东莞 523808"}]},{"lang":"en","label":"2","text":"School of Mechanical Engineering， Dongguan University of Technology， Dongguan  523808，China","data":[{"name":"text","data":"School of Mechanical Engineering， Dongguan University of Technology， Dongguan  523808，China"}]}]},{"id":"aff3","intro":[{"lang":"zh","label":"3","text":"华南师范大学 信息光电子科技学院， 广东 广州 510631","data":[{"name":"text","data":"华南师范大学 信息光电子科技学院， 广东 广州 510631"}]},{"lang":"en","label":"3","text":"School of Information Optoelectronic Technology， South China Normal University，Guangzhou， 510631，China","data":[{"name":"text","data":"School of Information Optoelectronic Technology， South China Normal University，Guangzhou， 510631，China"}]}]},{"id":"aff4","intro":[{"lang":"zh","label":"4","text":"华南理工大学 发光材料与器件国家重点实验室， 广东 广州 510640","data":[{"name":"text","data":"华南理工大学 发光材料与器件国家重点实验室， 广东 广州 510640"}]},{"lang":"en","label":"4","text":"State Key Laboratory of Luminescent Materials and Devices， South China University of;Technology， Guangzhou 510640，China","data":[{"name":"text","data":"State Key Laboratory of Luminescent Materials and Devices， South China University of;Technology， Guangzhou 510640，China"}]}]},{"id":"aff5","intro":[{"lang":"zh","label":"5","text":"广州彩屏显示技术有限公司， 广东 广州 510700","data":[{"name":"text","data":"广州彩屏显示技术有限公司， 广东 广州 510700"}]},{"lang":"en","label":"5","text":"Guangzhou Color Screen Display Technology Limited Company， Guangzhou 510700，China","data":[{"name":"text","data":"Guangzhou Color Screen Display Technology Limited Company， Guangzhou 510700，China"}]}]}]},"abstracts":[{"lang":"zh","data":[{"name":"p","data":[{"name":"text","data":"微米发光二极管（Micro-LED）显示是一项新颖并有着广泛应用前景的技术，在显示技术中占有重要地位。Micro-LED拥有亮度高、功耗低、寿命长、响应时间短和稳定性高等优点。可以应用于虚拟现实（Virtual Reality，VR）、增强现实（Augmented Reality，AR）、手机等微小型显示器，也可应用于家用电视、会议墙等中大型显示器，在显示领域具有较好的发展潜力。虽然Micro-LED显示应用前景广阔，但其技术尚不成熟，驱动技术面临生产成本高、资源分散等问题，限制了其产业化进程。本文回顾了自2000年以来Micro-LED显示技术的发展历程和研究成果，分析了阵列制备和倒装芯片集成技术，重点研究了Micro-LED显示驱动技术。Micro-LED显示驱动技术分为无源驱动和有源驱动方式，主要介绍了无源驱动的电路原理，有源驱动的互补金属氧化物半导体驱动技术、薄膜晶体管驱动技术以及有源像素驱动电路。"}]}]},{"lang":"en","data":[{"name":"p","data":[{"name":"text","data":"Micro-LED （Micro-LED） display is a revolutionary and promising technology that has a significant impact on display technology. Micro-LED has high brightness， low power consumption， extended life， short response time， and good stability. It has good development potential in the display area and may be applied to virtual reality （VR）， augmented reality （AR）， mobile phone micro-displays， as well as household TV， conference wall， and other big and medium-sized displays. Although Micro-LED display has broad application prospects， its technology is still not mature， driving technology is facing high production costs， resource dispersion and other issues， limiting its industrialization process. This study examines the development process and research outcomes of Micro-LED display technology since 2000， analyzes array preparation and flip chip integration technology， and concentrates on the driving technology of Micro-LED displays. Micro-LED display driving technology is classified into two categories： passive driving and active driving. The circuit theory of passive driving， complementary metal oxide semiconductor driven by active driving， thin film transistor driving technology， and active pixel driving circuit are primarily introduced."}]}]}],"keyword":[{"lang":"zh","data":[[{"name":"text","data":"Micro-LED"}],[{"name":"text","data":"阵列制备"}],[{"name":"text","data":"显示"}],[{"name":"text","data":"CMOS驱动"}],[{"name":"text","data":"TFT驱动"}]]},{"lang":"en","data":[[{"name":"text","data":"Micro-LED"}],[{"name":"text","data":"array fabrication"}],[{"name":"text","data":"display"}],[{"name":"text","data":"CMOS driver"}],[{"name":"text","data":"TFT driver"}]]}],"highlights":[],"body":[{"name":"sec","data":[{"name":"sectitle","data":{"label":[],"title":[],"level":"1","id":"s1"}}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"1  引    言"}],"level":"1","id":"s2"}},{"name":"p","data":[{"name":"text","data":"随着新一轮科技革命的发展，液晶显示（Liquid Crystal Display，LCD）、有机发光二机管（Organic Light Emitting Display，OLED）显示技术方兴未艾，新兴微米发光二极管（Micro-LED）显示技术也崭露头角，显示行业呈现出多样化发展的趋势"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"1","type":"bibr","rid":"R1","data":[{"name":"text","data":"1"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"9","type":"bibr","rid":"R9","data":[{"name":"text","data":"9"}]}}],"rid":["R1","R2","R3","R4","R5","R6","R7","R8","R9"],"text":"1-9","type":"bibr"}},{"name":"text","data":"］"}]},{"name":"text","data":"。传统LCD成本低，寿命长，但它的对比度和灵活性有限；有机发光二极管（OLED）显示器可用作柔性显示，拥有较好的暗状态，但存在老化和寿命短的问题"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"10","type":"bibr","rid":"R10","data":[{"name":"text","data":"10"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。Micro-LED显示有亮度高、寿命长、色域广、稳定性好等突出特点，可以满足高端显示的个性化需求，如5G超高清显示、AR眼镜、医疗显示和车载显示等新应用"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"11","type":"bibr","rid":"R11","data":[{"name":"text","data":"11"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"12","type":"bibr","rid":"R12","data":[{"name":"text","data":"12"}]}}],"rid":["R11","R12"],"text":"11-12","type":"bibr"}},{"name":"text","data":"］"}]},{"name":"text","data":"。近年来，全球已有大量的研究机构、企业对Micro-LED显示技术进行深入研究，并采用不同的工艺技术，成功研发了各种高性能的Micro-LED显示器样机或产品"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"13","type":"bibr","rid":"R13","data":[{"name":"text","data":"13"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"15","type":"bibr","rid":"R15","data":[{"name":"text","data":"15"}]}}],"rid":["R13","R14","R15"],"text":"13-15","type":"bibr"}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"Micro-LED显示技术是指利用Micro-LED芯片实现全彩显示的新型显示技术，其涵盖了芯片制备、驱动基板制备、巨量转移与键合、全彩化等技术"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"16","type":"bibr","rid":"R16","data":[{"name":"text","data":"16"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。Micro-LED是一种自发光元件，一般由红（R）绿（G）蓝（B）三种发光颜色的微米尺寸LED芯片构成一个单独的像素。从表面上看，Micro-LED与LED相比仅仅是尺寸方面发生改变，但实际上，是将LED微小化、薄膜化和矩阵化来获取Micro-LED，由毫米量级转为微米量级。Micro-LED尺寸的改变，对其相关的材料生长、器件制备、驱动技术、生产工艺等过程均产生影响，和应用于照明的LED有本质的区别"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"17","type":"bibr","rid":"R17","data":[{"name":"text","data":"17"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"早在20世纪90年代，就已出现了RGB三种发光颜色的LED芯片，将其构成像素单元制备LED显示屏，该显示屏像素封装尺寸较大，像素间距为20 mm（P20）"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"18","type":"bibr","rid":"R18","data":[{"name":"text","data":"18"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。随着显示技术的快速发展，LED芯片不断微型化，封装技术得到改进，目前市场上常见的LED显示屏像素间距约为3 mm（P3），还出现了次毫米发光二极管（Mini-LED）和微米发光二极管（Micro-LED）"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"19","type":"bibr","rid":"R19","data":[{"name":"text","data":"19"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。Mini-LED和Micro-LED芯片尺寸都小于1 mm，从尺寸上区分Mini-LED和Micro-LED还没有公认的标准，有些学者认为二者尺寸应以100 µm为分界线，芯片尺寸在100~200 µm之间的称之为Mini-LED，而当LED芯片尺寸微缩到100 µm以下时称之为Micro-LED"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"20","type":"bibr","rid":"R20","data":[{"name":"text","data":"20"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"21","type":"bibr","rid":"R21","data":[{"name":"text","data":"21"}]}}],"rid":["R20","R21"],"text":"20-21","type":"bibr"}},{"name":"text","data":"］"}]},{"name":"text","data":"；也有学者认为二者应以50 µm为分界线"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"22","type":"bibr","rid":"R22","data":[{"name":"text","data":"22"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。Mini-LED和Micro-LED显示屏有不同的应用场景，Mini-LED一般作为LCD的背光源出现，再结合量子点技术，来实现高动态范围显示，而Micro-LED直接用于制作显示像素"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"23","type":"bibr","rid":"R23","data":[{"name":"text","data":"23"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"本文将介绍Micro-LED显示技术的发展历程、Micro-LED阵列的制备、倒装芯片集成技术以及显示驱动技术。在显示驱动技术中重点介绍了有源驱动（Active Matrix， AM）部分，描述了互补金属氧化物半导体（Complementary Metal Oxide Semiconductor， CMOS）驱动、薄膜晶体管（Thin Film Transistor， TFT）驱动两种主流的驱动原理，并详细解析了3个像素驱动电路实例。在CMOS驱动部分，介绍了CMOS驱动的原理和CMOS驱动RGB Micro-LED的方法。在TFT驱动部分中，对在玻璃基板上生长的低温多晶硅（Low Temperature Polycrystalline Silicon，LTPS）TFT、铟镓锌氧化物（Indium Gallium Zinc Oxide，IGZO）TFT和低温多晶硅氧化物（Low Temperature Polycrystalline Oxide，LTPO）TFT进行了分析。对最基本的双晶体管单电容（2 Transistor 1 Capacitor，2T1C）有源驱动结构的工作原理进行了介绍，并拓展介绍了3T1C和4T2C像素电路结构。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"2  Micro-LED显示技术的发展历程"}],"level":"1","id":"s3"}},{"name":"p","data":[{"name":"text","data":"2000年美国堪萨斯州立大学江红星等人，制备了基于Ⅲ族氮化物的Micro-LED"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"24","type":"bibr","rid":"R24","data":[{"name":"text","data":"24"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"，并在2001年采用无源驱动（Passive Matrix， PM）的方式成功制备了10×10的蓝光Micro-LED阵列"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"25","type":"bibr","rid":"R25","data":[{"name":"text","data":"25"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2004年，斯特拉斯克莱德大学Choi等人利用光刻技术制作了一种蓝光128×96有源驱动Micro-LED显示阵列，该显示器的单个像素单元的尺寸为20 µm"},{"name":"sup","data":[{"name":"text","data":" ［"},{"name":"xref","data":{"text":"26","type":"bibr","rid":"R26","data":[{"name":"text","data":"26"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2007年，Dawson等人制备了64×64的无源驱动Micro-LED矩阵，通过在每个n型氮化镓区域连接一根额外的金属线，以改善阵列的发光均匀性"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"27","type":"bibr","rid":"R27","data":[{"name":"text","data":"27"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2006年Rogers等人研发了弹性印章转移技术，这一技术的出现提高了Micro-LED阵列巨量转移的可行性"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"28","type":"bibr","rid":"R28","data":[{"name":"text","data":"28"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"，并在2009年采用弹性印章转移打印技术制造了红光Micro-LED阵列，使用专门的外延半导体层，可以制作大量超薄器件"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"29","type":"bibr","rid":"R29","data":[{"name":"text","data":"29"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2009年，香港科技大学刘召军等人采用倒装芯片技术制备基于氮化镓（GaN）的有源Micro-LED阵列并可以单独控制LED像素"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"30","type":"bibr","rid":"R30","data":[{"name":"text","data":"30"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2011年，美国德克萨斯理工大学Day等人通过倒装焊技术将Si-CMOS驱动背板和绿光Micro-LED阵列进行集成，制备了160×120的绿光Micro-LED阵列，像素单元尺寸大小为12 µm"},{"name":"sup","data":[{"name":"text","data":" ［"},{"name":"xref","data":{"text":"31","type":"bibr","rid":"R31","data":[{"name":"text","data":"31"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2012年，索尼公司发布了一款1 397 mm （55 in）的高清Micro-LED电视面板，将Micro-LED作为商业产品出现在公众的视野，推动了Micro-LED大规模商业化的进程。Ostendo、X-Celeprint、PlayNitride等显示公司也陆续成立，美国苹果公司在2014年收购LuxVue后，Micro-LED显示技术步入快速发展阶段。"}]},{"name":"fig","data":{"id":"F1","caption":[{"lang":"zh","label":[{"name":"text","data":"图1"}],"title":[{"name":"text","data":"Micro-LED发展历程"}]},{"lang":"en","label":[{"name":"text","data":"Fig.1"}],"title":[{"name":"text","data":"Development history of Micro-LED"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241766&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241768&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241767&type=","width":"161.79998779","height":"117.07738495","fontsize":""}]}},{"name":"p","data":[{"name":"text","data":"2015年，美国Lumiode公司和哥伦比亚大学合作完成了在一个晶片上集成Micro-LED阵列与硅晶体管薄膜驱动电路的工作，展示了一种使用TFT有源驱动Micro-LED矩阵"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"32","type":"bibr","rid":"R32","data":[{"name":"text","data":"32"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2015年香港科技大学郭海成等人采用气溶胶喷射技术来实现Micro-LED全彩化显示，将量子点喷涂在紫外光Micro-LED阵列上激发RGB三原色"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"33","type":"bibr","rid":"R33","data":[{"name":"text","data":"33"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"，并在2017年采用光刻胶模具，克服了Micro-LED阵列在集成过程中颜色转换材料的光串扰问题"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"34","type":"bibr","rid":"R34","data":[{"name":"text","data":"34"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2017年，韩国机械与材料研究所Kim等人通过滚轮转印技术将Micro-LED阵列和Si-TFT电路转移到弹性基板上进行集成，实现柔性Micro-LED显示"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"35","type":"bibr","rid":"R35","data":[{"name":"text","data":"35"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。同年法国Leti公司展示了原型宽视频图形阵列（WVGA）微型显示器，其像素间距仅10 µm，该显示器是基于单色（蓝色或绿色）GaN基Micro-LED阵列并与CMOS驱动电路结合"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"6","type":"bibr","rid":"R6","data":[{"name":"text","data":"6"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"2018年以后Micro-LED显示进入爆发期。台湾錼创公司展示了两款全彩Micro-LED原型，一款是22.61 mm （0.89 in） 64×64面板，分辨率为105 PPI（Pixels Per Inch，PPI），另一款是79.25 mm （3.12 in） 256×256面板，分辨率为116 PPI"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"6","type":"bibr","rid":"R6","data":[{"name":"text","data":"6"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。台湾友达光电公司展示了一款307.34 mm （12.1 in）分辨率为169 PPI的全彩1 920×720的Micro-LED显示屏"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"7","type":"bibr","rid":"R7","data":[{"name":"text","data":"7"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2018年，台湾錼创公司与天马微电子公司合作开发了有源驱动LTPS TFT背板制备而成的透明Micro-LED显示器，其分辨率为114 PPI、透明度为60%，Micro-LED透明显示屏可用于新型显示应用领域。2018年，香港北大青鸟公司在晶片上使用标准半导体设备和工艺制造红、绿、蓝3种单色Micro-LED显示面板，分辨率为5 000 PPI"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"36","type":"bibr","rid":"R36","data":[{"name":"text","data":"36"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2019年，法国Leti公司采用微管技术将CMOS驱动电路和RGB Micro-LED单元组进行集成，制备了像素单元尺寸大小为3 µm/5 µm的Micro-LED阵列"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"37","type":"bibr","rid":"R37","data":[{"name":"text","data":"37"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"2020年，台湾大学制备了14 µm的GaN基Micro-LED器件，集成了并联式2×2、2×3、2×4和2×5阵列结构，能够进行统一驱动，相比于单独复杂的驱动电路，该设计简化了制备工艺和驱动电路设计步骤"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"38","type":"bibr","rid":"R38","data":[{"name":"text","data":"38"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2021年，复旦大学田朋飞课题组研制了绿光80 µm×80 µm的GaN基Micro-LED阵列，可以实现双面显示和双工水下无线光通信（Underwater Wireless Optical Communication，UWOC），器件拥有透明衬底和双面发光的特点"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"39","type":"bibr","rid":"R39","data":[{"name":"text","data":"39"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"3  Micro-LED阵列制备工艺"}],"level":"1","id":"s4"}},{"name":"p","data":[{"name":"text","data":"RGB三基色是基于不同材料制备而成，如InGaN/GaN基材料用于制备绿光/蓝光Micro-LED阵列，AlInGaP/GaAs基材料用于制备红光Micro-LED阵列。一般在蓝宝石、砷化镓和硅等衬底上生长外延层，制备Micro-LED阵列。以蓝宝石衬底上制备GaN Micro-LED阵列为例，其制作过程包括5个步骤：台面结构（Mesa Structure，MS）、电流扩展层（Spreading Layer，SL）、p和n电极层（Electrode Layer，EL）、钝化层（Passivation，PS）和接触垫（Contact Pads，CP）。首先，采用金属有机化学气相沉积（Metal-organic Chemical Vapor Deposition，MOCVD）技术在蓝宝石衬底上生长外延层，包括n-GaN层、MQW层和p-GaN层；接着蚀刻p-GaN层和MQW层以隔离像素，形成台面结构；然后在p-GaN层上蒸镀电流扩展层；并在电流扩展层上沉积p电极层，在n-GaN层沉积n电极层，再沉积一层钝化层；最后一步是构建n型接触垫和p型接触垫。构建好的接触垫有利于后续芯片集成，将Micro-LED像素的n电极连接在一起，p电极连接到AM背板上驱动电路的各个输出端"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"40","type":"bibr","rid":"R40","data":[{"name":"text","data":"40"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。具体的工艺流程如"},{"name":"xref","data":{"text":"图2","type":"fig","rid":"F2","data":[{"name":"text","data":"图2"}]}},{"name":"text","data":"（a）所示。"}]},{"name":"fig","data":{"id":"F2","caption":[{"lang":"zh","label":[{"name":"text","data":"图2"}],"title":[{"name":"text","data":"（a）Micro-LED阵列制作的工艺流程"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"40","type":"bibr","rid":"R40","data":[{"name":"text","data":"40"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"；（b）硅上单个像素集成结构图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"41","type":"bibr","rid":"R41","data":[{"name":"text","data":"41"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"lang":"en","label":[{"name":"text","data":"Fig.2"}],"title":[{"name":"text","data":"（a） Process flow for Micro-LED array fabrication"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"40","type":"bibr","rid":"R40","data":[{"name":"text","data":"40"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"； （b） Single pixel integration structure diagram on silicon"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"41","type":"bibr","rid":"R41","data":[{"name":"text","data":"41"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241769&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241771&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241770&type=","width":"76.98739624","height":"30.22599983","fontsize":""}]}},{"name":"p","data":[{"name":"text","data":"Choi等人在硅衬底上制备GaN Micro-LED显示器，由Si TFT驱动Micro-LED像素单元来实现有源寻址"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"41","type":"bibr","rid":"R41","data":[{"name":"text","data":"41"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。他们在101.6 mm （4 in）硅片上利用MOCVD技术制备了一种蓝光LED外延结构，生长的LED的总厚度为1.7 µm，薄的外延层可以有效减少LED与金属氧化物半导体场效应晶体管（Metal Oxide Semiconductor Field Effect Transistor，MOSFET）在平面上的高度差。再对LED外延层进行光刻，暴露出硅表面，使用硫酸过氧化氢混合（Sulfuric Acid Hydrogen Peroxide Mixture，SPM）溶液进行清洗，去除可能导致MOSFET故障的金属残留物，然后在其上面制备驱动电路。将制备好的Micro-LED芯片通过沉积金属线与驱动电路相连，成功制备了一个60×60的像素阵列，单个Micro-LED集成结构如"},{"name":"xref","data":{"text":"图2","type":"fig","rid":"F2","data":[{"name":"text","data":"图2"}]}},{"name":"text","data":"（b）所示。"}]},{"name":"p","data":[{"name":"text","data":"随着阵列制备技术的提升，Micro-LED 尺寸的减小会带来尺寸效应、边缘效应以及低刻蚀损伤和钝化修复技术等难题。尺寸越小，电感耦合等离子体（Inductive Coupled Plasma Emission Spectrometer，ICP）刻蚀区域（侧壁）与有源区体积的比率会增加，刻蚀损伤所形成的缺陷占比越高。这些缺陷导致非辐射复合比例逐渐上升，增加了有源区内肖克利·雷德·霍尔（SRH）非辐射复合几率，降低了辐射复合几率和发光效率，同时也会引入新的漏电通道加重器件反向漏电"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"42","type":"bibr","rid":"R42","data":[{"name":"text","data":"42"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"43","type":"bibr","rid":"R43","data":[{"name":"text","data":"43"}]}}],"rid":["R42","R43"],"text":"42-43","type":"bibr"}},{"name":"text","data":"］"}]},{"name":"text","data":"，在小尺寸Micro-LED （＜10 µm） 中这些现象更为显著"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"44","type":"bibr","rid":"R44","data":[{"name":"text","data":"44"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。LED 外延中p型层电导率相对较差，当尺寸减小至数十微米，这个能级弯曲变得更加严重，增加了空穴的注入难度，而且 ICP 刻蚀引起的侧壁悬空键还进一步使得注入的电子和空穴的非辐射复合显著增加，导致发光效率和使用寿命下降，如尺寸从400 µm减小至20 µm，其电流密度光效下降比例可达约50%"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"45","type":"bibr","rid":"R45","data":[{"name":"text","data":"45"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"4  Micro-LED衬底剥离及键合技术"}],"level":"1","id":"s5"}},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"4.1　Micro-LED衬底剥离技术"}],"level":"2","id":"s5a"}},{"name":"p","data":[{"name":"text","data":"Micro-LED阵列生长的外延层通常需要从原始衬底上剥离，并转移键合到具有特定功能的驱动背板上实现显示。去除Micro-LED衬底主要使用激光剥离技术和化学刻蚀技术"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"46","type":"bibr","rid":"R46","data":[{"name":"text","data":"46"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。激光剥离（Laser Lift-off，LLO）技术去除对紫外光透明的蓝宝石衬底，是利用高能脉冲激光束透过蓝宝石衬底照射到GaN薄膜上，使得GaN与蓝宝石衬底交界面形成局部分解，GaN层大量吸收光子能量，分解成N"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"和Ga原子实现蓝宝石剥离。在激光扫描整个样品后，蓝宝石衬底被彻底移除。LLO技术适用于不同吸收系数和晶格常数的材料之间，在界面处产生应力，从而导致蓝宝石衬底与GaN薄膜脱离"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"47","type":"bibr","rid":"R47","data":[{"name":"text","data":"47"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。化学刻蚀方法去除衬底操作步骤更为方便，通常采用化学刻蚀方法去除硅衬底，使用KOH溶液对硅衬底进行各向异性刻蚀，彻底的各向异性湿法刻蚀可以使Micro-LED器件层处于悬空状态，通常采用聚二甲基硅氧烷（Polydimethylsiloxane，PDMS）印章"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"48","type":"bibr","rid":"R48","data":[{"name":"text","data":"48"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"与器件层接触产生一定的压力，进行拾取，然后扯断硅衬底与器件层之间的残余连接点，将Micro-LED器件层从硅衬底中分离出来"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"49","type":"bibr","rid":"R49","data":[{"name":"text","data":"49"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"4.2　Micro-LED与驱动基板的键合技术"}],"level":"2","id":"s5b"}},{"name":"p","data":[{"name":"text","data":"将Micro-LED从原始衬底上剥离下来后，需要通过转移技术将Micro-LED阵列与驱动基板进行键合。常用的两种键合方式包括传统的引线键合和改进的倒装芯片键合"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"40","type":"bibr","rid":"R40","data":[{"name":"text","data":"40"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"，如"},{"name":"xref","data":{"text":"图3","type":"fig","rid":"F3","data":[{"name":"text","data":"图3"}]}},{"name":"text","data":"所示。大像素显示和无源矩阵驱动电路通常使用引线键合方式，如"},{"name":"xref","data":{"text":"图3","type":"fig","rid":"F3","data":[{"name":"text","data":"图3"}]}},{"name":"text","data":"（a）所示，Micro-LED器件的水平电极分别用金线连接到n、p触点垫上来实现接触。该方法易于实现，成本低，缺点是散热能力差，受尺寸限制，不适合高分辨率显示。在有源驱动显示中Micro-LED阵列n电极共同连接到接地端，p电极独立与驱动电路相连，采用倒装芯片键合技术，每个Micro-LED像素与配套的CMOS驱动电路键合在一起。该CMOS控制单元能够存储数据并驱动每个单独的Micro-LED像素，如"},{"name":"xref","data":{"text":"图3","type":"fig","rid":"F3","data":[{"name":"text","data":"图3"}]}},{"name":"text","data":"（b）所示。倒装键合方式主要分为热压倒装焊和回流倒装焊两种，包括使用热压焊技术的金倒装键合/Cu-Sn无金倒装键合和使用回流焊技术的铟倒装键合、金属微管倒插键合。"}]},{"name":"fig","data":{"id":"F3","caption":[{"lang":"zh","label":[{"name":"text","data":"图3"}],"title":[{"name":"text","data":"像素键合方式。（a）引线键合；（b）倒装芯片键合"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"40","type":"bibr","rid":"R40","data":[{"name":"text","data":"40"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"lang":"en","label":[{"name":"text","data":"Fig.3"}],"title":[{"name":"text","data":"Pixel bonding. （a） Wire bonding； （b） Inverted chip bonding"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"40","type":"bibr","rid":"R40","data":[{"name":"text","data":"40"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241772&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241776&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241774&type=","width":"59.98633194","height":"25.01899910","fontsize":""}]}},{"name":"p","data":[{"name":"text","data":"金倒装键合方案已应用于Micro-LED显示技术中"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"50","type":"bibr","rid":"R50","data":[{"name":"text","data":"50"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"51","type":"bibr","rid":"R51","data":[{"name":"text","data":"51"}]}}],"rid":["R50","R51"],"text":"50-51","type":"bibr"}},{"name":"text","data":"］"}]},{"name":"text","data":"。下面以在蓝宝石衬底上制备蓝光Micro-LED阵列为例介绍金倒装键合方案。先利用MOCVD技术在衬底上依次制备n-GaN层、MQW层和p-GaN层，通过ICP技术刻蚀成台面阵列，在整个阵列露出n-GaN区域；然后利用电子蒸发器沉积由Cr/Al/Ti/Au（70/1 700/50/200 nm）组成的金属层作为n型电极，使用等离子体增强化学气相沉积（Plasma Enhanced Chemical Vapor Deposition，PECVD）技术沉积SiO"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"作为钝化层；接着刻蚀台面阵列上的SiO"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"层露出p-GaN层，在p-GaN上蒸镀出Ni/Ag/Pt/Au（1/200/50/300 nm）金属层作为p型电极；最后使用金凸点来提供Micro-LED和CMOS两个芯片之间的电气互连，获得高质量的倒装键合芯片"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"52","type":"bibr","rid":"R52","data":[{"name":"text","data":"52"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"，其倒装结构如"},{"name":"xref","data":{"text":"图4","type":"fig","rid":"F4","data":[{"name":"text","data":"图4"}]}},{"name":"text","data":"（a）所示。由于金材料更容易黏附到CMOS器件上，通常将金丝接触到CMOS芯片上，在键合处进行热压和超声来熔化金丝，使其形成金凸点附着在CMOS芯片上，将CMOS芯片的金面朝上并平放在加热的真空吸板上，再使用真空头吸附Micro-LED阵列器件衬底，通过显微镜使得Micro-LED器件的电极和CMOS阵列的金凸点精确对准，将两个芯片压在一起，再应用超声波熔化两个阵列之间的金凸点完成键合"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"53","type":"bibr","rid":"R53","data":[{"name":"text","data":"53"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"fig","data":{"id":"F4","caption":[{"lang":"zh","label":[{"name":"text","data":"图4"}],"title":[{"name":"text","data":"热压焊/回流焊倒装键合示意图。（a）金倒装键合截面图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"52","type":"bibr","rid":"R52","data":[{"name":"text","data":"52"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"；（b）Cu-Sn无金倒装键合显微镜图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"54","type":"bibr","rid":"R54","data":[{"name":"text","data":"54"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"；（c）铟倒装键合截面图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"55","type":"bibr","rid":"R55","data":[{"name":"text","data":"55"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"lang":"en","label":[{"name":"text","data":"Fig.4"}],"title":[{"name":"text","data":"Schematic diagram of thermal pressure soldering/reflow soldering flip-chip. （a） Section drawing of gold flip bonding"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"52","type":"bibr","rid":"R52","data":[{"name":"text","data":"52"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"； （b） Cu-Sn gold-free inverted bonding microscope"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"54","type":"bibr","rid":"R54","data":[{"name":"text","data":"54"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"； （c） Section drawing of indium flip bonding"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"55","type":"bibr","rid":"R55","data":[{"name":"text","data":"55"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241778&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241782&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241780&type=","width":"70.35800171","height":"52.62033844","fontsize":""}]}},{"name":"p","data":[{"name":"text","data":"但由于使用厚Au层的成本过高，Cu-Sn无金倒装键合成为了一种可以选择的方案。2019年，香港科技大学展示了通过Cu-Sn无金倒装键合方案，在GaN-on-Si外延层上制备了有源Micro-LED显示器"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"54","type":"bibr","rid":"R54","data":[{"name":"text","data":"54"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"，如"},{"name":"xref","data":{"text":"图4","type":"fig","rid":"F4","data":[{"name":"text","data":"图4"}]}},{"name":"text","data":"（b）所示。Micro-LED阵列由64×36像素组成，顶部电镀5 µm厚的30 µm×30 µm的Cu方块凸起，然后电镀5 µm厚的直径为20 µm的Sn圆块和4 µm厚的直径为20 µm的Cu圆块凸起。该Micro-LED器件尺寸为1.60 mm×2.72 mm，像素单元尺寸为40 µm×40 µm，分辨率为635 PPI。"}]},{"name":"p","data":[{"name":"text","data":"将Micro-LED阵列通过铟凸点倒装键合Si CMOS驱动芯片上的过程如"},{"name":"xref","data":{"text":"图4","type":"fig","rid":"F4","data":[{"name":"text","data":"图4"}]}},{"name":"text","data":"（c）所示。在蓝宝石衬底上生长蓝光LED外延层，溅射沉积70 nm厚的氧化铟锡（Indium Tin Oxide，ITO）作为p-GaN的电流扩展层，可以与p-GaN形成欧姆接触，使用ICP技术刻蚀成台面阵列，在露出的n-GaN区域沉积Ti/Al层作为公共阴极，然后沉积二氧化硅作为钝化层，再在n-GaN区域沉积Ti/Al层作为阳极。在每个金属电极的顶部制备铟凸点时，首先利用光刻形成凸点下金属（Under Bump Metal，UBM）预留孔，然后依次沉积UBM，光刻铟柱孔，热蒸发沉积铟，剥离后形成盘状铟，在回流炉中退火后，使所有的圆盘状铟回流成为铟球凸点，铟经过回流处理后，用倒装键合机将Micro-LED阵列与CMOS驱动背板键合"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"55","type":"bibr","rid":"R55","data":[{"name":"text","data":"55"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。2013年香港科技大学制备了不同直径铟球凸点，经回流处理后，其中最小的一个的铟球直径为5 µm，通过铟倒装键合方式进一步提高了有源驱动Micro-LED显示的分辨率"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"56","type":"bibr","rid":"R56","data":[{"name":"text","data":"56"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"为了使显示器获得更高的分辨率，法国Leti公司开发了一种微管金属键合技术，可以使像素间距缩小到10 µm以下"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"57","type":"bibr","rid":"R57","data":[{"name":"text","data":"57"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。该技术是将金属尖端插入由2 000×2 000多凸点组成的焊盘中形成互连，实现了小于10 µm超细间距，其特点是无焊剂、低压，并且再在低温条件下即可完成Micro-LED阵列与Si CMOS驱动器件的集成"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"58","type":"bibr","rid":"R58","data":[{"name":"text","data":"58"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。具体过程为：先在Micro-LED电极上制备400万个10 µm间距的盘状铟，接着在180 ℃下回流成铟球形成凸点，然后在Si CMOS驱动芯片上生长金属微管。金属微管的制备步骤如"},{"name":"xref","data":{"text":"图5","type":"fig","rid":"F5","data":[{"name":"text","data":"图5"}]}},{"name":"text","data":"（a~c）所示，首先在Si CMOS驱动芯片的接触垫上旋涂一层树脂材料聚合物层，在聚合物层光刻出一个空心的圆柱体，暴露出接触电极；然后在整个器件表面溅射沉积总厚度为300 nm的金属层；接着在空心圆柱体内填充特定的保护材料，防止圆柱体底面和侧面的金属被刻蚀；最后使用反应离子刻蚀（Reactive Ion Etching，RIE）去除器件表面未被保护的金属层，并通过等离子体去除圆柱体金属微管周边的多余聚合物，完成金属微管的制备过程。通过光刻工艺可以刻蚀出直径小于10 µm的空心圆柱体金属微管，金属沉积相关参数确定微管的厚度。在Si CMOS与Micro-LED阵列经过精细对准后，将Si CMOS金属微管阵列在低温和低压下插入到Micro-LED阵列电极上"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"53","type":"bibr","rid":"R53","data":[{"name":"text","data":"53"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。微管键合过程如"},{"name":"xref","data":{"text":"图5","type":"fig","rid":"F5","data":[{"name":"text","data":"图5"}]}},{"name":"text","data":"（d）所示。"}]},{"name":"fig","data":{"id":"F5","caption":[{"lang":"zh","label":[{"name":"text","data":"图5"}],"title":[{"name":"text","data":"金属微管制备及键合过程示意图。（a）、（b）、（c）为金属微管制备流程图；（d）金属微管键合过程"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"58","type":"bibr","rid":"R58","data":[{"name":"text","data":"58"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"lang":"en","label":[{"name":"text","data":"Fig.5"}],"title":[{"name":"text","data":"Schematic diagram of metal microtube preparation and bonding process. （a），（b），（c） Preparation of metal microtubules； （d） Metal microtubule bonding process"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"58","type":"bibr","rid":"R58","data":[{"name":"text","data":"58"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241784&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241789&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241786&type=","width":"72.68633270","height":"83.77767181","fontsize":""}]}}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"5  Micro-LED驱动技术"}],"level":"1","id":"s6"}},{"name":"p","data":[{"name":"text","data":"Micro-LED显示技术有无源驱动（PM）和有源驱动（AM）两种驱动方式"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"59","type":"bibr","rid":"R59","data":[{"name":"text","data":"59"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。驱动方式不同，Micro-LED像素单元驱动电路的结构也不同。由于无源驱动采用扫描的方式，每一个时刻内仅有一行像素在发光，占空比非常小，因此不适合大尺寸显示。而采用有源驱动方式时各像素独立可控，是如今研究的主要方向。"}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"5.1　无源驱动技术"}],"level":"2","id":"s6a"}},{"name":"p","data":[{"name":"text","data":"无源驱动方式将每一列像素的阳极（P-electrode）连接到列数据，每一行像素的阴极（N-electrode）连接到行扫描线。某特定的行和列有电流信号通过时，在行列交叉处的像素单元将会被点亮。逐行地对每个像素施加不同的电压，每个像素能够实现不同的亮度显示，以点阵的方式动态显示图像。采用Micro-LED无源驱动技术会导致电流密度过高，线间存在串扰，矩阵上不同布线长度的阻抗存在偏差等问题，Micro-LED显示器的分辨率、亮度、可靠性和画面质量均受到限制"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"13","type":"bibr","rid":"R13","data":[{"name":"text","data":"13"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。Micro-LED无源驱动的等效电路图如"},{"name":"xref","data":{"text":"图6","type":"fig","rid":"F6","data":[{"name":"text","data":"图6"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"F6","caption":[{"lang":"zh","label":[{"name":"text","data":"图6"}],"title":[{"name":"text","data":"无源驱动等效电路图"}]},{"lang":"en","label":[{"name":"text","data":"Fig.6"}],"title":[{"name":"text","data":"Equivalent circuit diagram of passive drive"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241792&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241796&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241794&type=","width":"64.98166656","height":"55.96466827","fontsize":""}]}},{"name":"p","data":[{"name":"text","data":"2014年，刘召军等人制备了一个4.826 mm （0.19 in）的1 700 PPI蓝光无源矩阵Micro-LED显示器，显示区域的大小为3.8 mm×2.9 mm，由256×192像素组成"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"60","type":"bibr","rid":"R60","data":[{"name":"text","data":"60"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。该显示器使用无源驱动技术，不需要制备CMOS/TFT驱动，但需要对GaN晶片刻蚀至蓝宝石衬底，使LED像素单元之间的n、p电极保持各自独立，形成单个Micro-LED像素。其制备过程如"},{"name":"xref","data":{"text":"图7","type":"fig","rid":"F7","data":[{"name":"text","data":"图7"}]}},{"name":"text","data":"所示。首先，在硅衬底上生长一层GaN外延层，在无源驱动Micro-LED阵列中，同一列LED像素共用一个n电极，需要通过ICP技术将GaN刻蚀至蓝宝石衬底处构建隔离沟，将n型氮化镓层完全隔离断开；然后，在像素顶部的特定区域沉积ITO，形成p型电极连接点；接着快速热退火获得导电特性，并在n型氮化镓层上建立了长条状的n型电极；再在整个外晶片上涂上透明的聚酰亚胺进行钝化和分离；最后打开接触孔，露出p型电极接触点，为p型电极后面连线做准备。"}]},{"name":"fig","data":{"id":"F7","caption":[{"lang":"zh","label":[{"name":"text","data":"图7"}],"title":[{"name":"text","data":"无源矩阵制备流程图。（a）形成隔离沟；（b）像素的图案化和蒸镀p型欧姆接触点；（c）沉积条纹状n型电极；（d）涂布透明聚酰亚胺；（e）沉积条纹状p型电极"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"60","type":"bibr","rid":"R60","data":[{"name":"text","data":"60"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"lang":"en","label":[{"name":"text","data":"Fig.7"}],"title":[{"name":"text","data":"Fabrication process of passive matrix. （a） Formation of isolation trenches； （b） Pixel patterning and evaporation of p-type electrodes form ohmic contact； （c） N-electrode stripes definition； （d） Patterning of transparent polyimide； （e） P-electrode stripes 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driver. （a） Flip chip bonding of Micro-LED arrays and active matrix CMOS backplane； （b） Schematic diagram of pixel drive circuit"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"61","type":"bibr","rid":"R61","data":[{"name":"text","data":"61"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241805&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241809&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241808&type=","width":"45.84700012","height":"57.10766220","fontsize":""}]}},{"name":"p","data":[{"name":"text","data":"采用CMOS电路驱动Micro-LED像素或者驱动Micro-LED像素组的传统方法，是将晶片切割成红色、绿色和蓝色的Micro-LED，然后逐个转移至接收衬底上。使用的接收衬底不再是1个TFT的背板，而是一个由行和列导电线路组成更加简单和便宜的衬底。Micro-LED则由CMOS电路驱动，但是如果采用这种方法制造Micro-LED显示器，RGB Micro-LED和驱动电路需要单独进行转移，至少需要进行4次转移，无疑使得转移过程更加难以进行，并且还需要进一步处理使CMOS驱动电路与Micro-LED建立连接。法国Leti公司进行了改进，首先制备CMOS驱动电路晶片，并将CMOS驱动晶片和蓝光Micro-LED外延片进行键合，通过芯片制备技术在外延片上制作蓝光Micro-LED阵列，再将蓝光Micro-LED进行色彩转换，获得RGB Micro-LED单元组，通过微管倒装键合方式将单元组和CMOS驱动电路单元进行集成，制造了1个由CMOS驱动电路和RGB Micro-LED组成的微型集成器件，并将整个器件转移到由行和列导电线路组成的接收衬板上，不再需要将单个像素依次转移到接收衬底上，提升了产品良率"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"37","type":"bibr","rid":"R37","data":[{"name":"text","data":"37"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。这种方法结合了CMOS驱动和简单传输过程，制备出像素单元尺寸为3 µm/5 µm的Micro-LED显示器。制备过程如"},{"name":"xref","data":{"text":"图9","type":"fig","rid":"F9","data":[{"name":"text","data":"图9"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"F9","caption":[{"lang":"zh","label":[{"name":"text","data":"图9"}],"title":[{"name":"text","data":"CMOS驱动RGB 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display"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"37","type":"bibr","rid":"R37","data":[{"name":"text","data":"37"}]}},{"name":"text","data":"］"}]}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241812&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241816&type=","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=36241814&type=","width":"76.90000153","height":"63.55303574","fontsize":""}]}}]},{"name":"sec","data":[{"name":"sectitle","data":{"title":[{"name":"text","data":"5"},{"name":"italic","data":[{"name":"text","data":"."}]},{"name":"text","data":"2"},{"name":"italic","data":[{"name":"text","data":"."}]},{"name":"text","data":"2　TFT驱动技术及应用"}],"level":"3","id":"s6b2"}},{"name":"p","data":[{"name":"text","data":"TFT驱动Micro-LED显示阵列与传统TFT-OLED技术类似，采用键合技术将Micro-LED阵列转移到TFT驱动的背板上，在玻璃基板上生长TFT，以非晶硅（a-Si）TFT、低温多晶硅（LTPS）TFT以及氧化物TFT三类为主要代表。a-Si TFT载流子迁移率较低，不适合制备高分辨率显示器，难以实现高质量显示。目前由LTPS TFT驱动Micro-LED器件性能较好，是因为LTPS TFT具有载流子迁移率高、高度集成化、响应速度快和低功耗等优点。LTPS TFT可以跟驱动电路制程整合，二者具有很好的相容性，但与氧化物TFT相比，LTPS TFT成本很高。以铟镓锌氧化物（IGZO）TFT为主的氧化物TFT具有漏电流较低、响应速度快、制备成本较低等优点，有较大的产业前景。"}]},{"name":"p","data":[{"name":"text","data":"韩国庆熙大学Jin等人提出LTPO驱动技术由p型LTPS TFT和n型IGZO TFT组合在1个像素电路中。该像素驱动电路拥有较小的驱动电流和较低的漏电流，降低了生产成本，降低了LTPS TFT自热效应的影响，获得高分辨率和刷新稳定性更好的显示设备"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"62","type":"bibr","rid":"R62","data":[{"name":"text","data":"62"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"（1）LTPS TFT驱动"}]},{"name":"p","data":[{"name":"text","data":"Jin等人在低温多晶硅（LTPS）TFT背板上展示了32×32像素的有源驱动Micro-LED显示器，有效面积为4 mm"},{"name":"sup","data":[{"name":"text","data":"2"}]},{"name":"text","data":"，像素间距为10 µm，显示了良好的均匀性，亮度超过40 000 cd/m"},{"name":"sup","data":[{"name":"text","data":"2"}]},{"name":"text","data":"，EL发射峰值波长为455 nm，半峰宽（FWHM）为15 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TFT驱动剖面结构图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"63","type":"bibr","rid":"R63","data":[{"name":"text","data":"63"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"；（c）双栅a-IGZO TFT驱动 Micro-LED显示截面图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"67","type":"bibr","rid":"R67","data":[{"name":"text","data":"67"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"；（d）LTPO TFT驱动结构截面图和电路原理图"},{"name":"sup","data":[{"name":"text","data":"［"},{"name":"xref","data":{"text":"62","type":"bibr","rid":"R62","data":[{"name":"text","data":"62"}]}},{"name":"text","data":"］"}]},{"name":"text","data":"。"}]},{"lang":"en","label":[{"name":"text","data":"Fig.10"}],"title":[{"name":"text","data":"Schematic diagram of active TFT driving Micro-LED array. （a） Micro-LED and TFT drive backplane 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