{"defaultlang":"zh","titlegroup":{"articletitle":[{"lang":"zh","data":[{"name":"text","data":"ITO连接过孔电阻定量计算与设计方法"}]},{"lang":"en","data":[{"name":"text","data":"Quantitative calculation and design method for the resistance of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole connected by ITO"}]}]},"contribgroup":{"author":[{"name":[{"lang":"zh","surname":"周","givenname":"焱","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHOU","givenname":"Yan","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":["first-author"],"bio":[{"lang":"zh","text":["周焱 (1988-)，男，湖北黄冈人，硕士，高级工程师，2014年于中国科学院大学获得硕士学位，主要从事TFT-LCD面板产品研发设计工作。E-mail: zhouyan@boe.com.cn"],"graphic":[],"data":[[{"name":"bold","data":[{"name":"text","data":"周焱"}]},{"name":"text","data":" (1988-)，男，湖北黄冈人，硕士，高级工程师，2014年于中国科学院大学获得硕士学位，主要从事TFT-LCD面板产品研发设计工作。E-mail: "},{"name":"text","data":"zhouyan@boe.com.cn"}]]}],"email":"zhouyan@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"王","givenname":"超","namestyle":"eastern","prefix":""},{"lang":"en","surname":"WANG","givenname":"Chao","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"陈","givenname":"鹏","namestyle":"eastern","prefix":""},{"lang":"en","surname":"CHEN","givenname":"Peng","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"朱","givenname":"宁","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHU","givenname":"Ning","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"江","givenname":"鹏","namestyle":"eastern","prefix":""},{"lang":"en","surname":"JIANG","givenname":"Peng","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":["corresp"],"corresp":[{"rid":"cor1","lang":"zh","text":"江鹏，E-mail：jiangp@boe.com.cn","data":[{"name":"text","data":"江鹏，E-mail：jiangp@boe.com.cn"}]}],"bio":[{"lang":"zh","text":["江鹏 (1987-)，男，安徽宣城人，硕士，2012年于合肥工业大学获得硕士学位，主要从事TFT-LCD面板设计工作及新技术研发工作。E-mail: jiangp@boe.com.cn"],"graphic":[],"data":[[{"name":"bold","data":[{"name":"text","data":"江鹏"}]},{"name":"text","data":" (1987-)，男，安徽宣城人，硕士，2012年于合肥工业大学获得硕士学位，主要从事TFT-LCD面板设计工作及新技术研发工作。E-mail: "},{"name":"text","data":"jiangp@boe.com.cn"}]]}],"email":"jiangp@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"高","givenname":"玉杰","namestyle":"eastern","prefix":""},{"lang":"en","surname":"GAO","givenname":"Yu-jie","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"deceased":false}],"aff":[{"id":"aff1","intro":[{"lang":"zh","label":"","text":"武汉京东方光电科技有限公司，湖北 武汉 430040","data":[{"name":"text","data":"武汉京东方光电科技有限公司，湖北 武汉 430040"}]},{"lang":"en","label":"","text":"Wuhan BOE Optoelectronics Technology Co., Ltd., Wuhan 430040, China","data":[{"name":"text","data":"Wuhan BOE Optoelectronics Technology Co., Ltd., Wuhan 430040, China"}]}]}]},"abstracts":[{"lang":"zh","data":[{"name":"p","data":[{"name":"text","data":"TFT-LCD面板内的ITO连接过孔目前只有一些定性的设计规则，缺乏定量计算和设计过孔的方法。本文研究了此类过孔电阻的定量计算方法，同时探索了过孔电阻与击穿电流的关系，为合理设计过孔、防止过孔烧毁提供了指导依据。首先，通过分析过孔的结构，抽象出等效电阻电路图，得到多种不同结构的过孔电阻分解公式。过孔电阻主要由深孔接触电阻、浅孔接触电阻和深浅孔之间连接的ITO电阻组成。然后，通过设计不同尺寸的金属与ITO的接触过孔，使用开尔文四线检测法测量得到深孔接触电阻和浅孔接触电阻与孔尺寸之间的关系式。同时，深浅孔之间连接的ITO电阻可通过ITO方块电阻与深浅孔之间的ITO尺寸计算得到。由此，我们仅依据过孔的尺寸信息及ITO方阻数据即可计算得到各种结构的过孔电阻阻值。通过对大量过孔电阻的实测值与计算值进行相关性分析，线性相关系数达到0.96，证明了该计算方法的可靠性。最后，通过测量大量过孔的电阻阻值及其击穿电流值，发现过孔电阻阻值与击穿电流之间存在显著的幂函数关系，幂指数在-1.3附近，相关系数达到0.98。自此，建立起了一整套可定量计算和设计过孔电阻和击穿电流的方法。"}]}]},{"lang":"en","data":[{"name":"p","data":[{"name":"text","data":"At present, there are only some qualitative design rules for "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole connected by ITO in TFT-LCD panel, and there is lack of quantitative calculation and design method of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole. In this paper, the quantitative calculation method for the resistance of this kind of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole is studied, and the relationship between the resistance and the breakdown current of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole is explored, which provides guidance for us to design "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole reasonably to prevent the hole from burning. Firstly, by analyzing the structure of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole, the equivalent resistance circuit diagram is abstracted and the decomposition formulas for the resistances of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" holes with various structures are obtained. The resistance of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole is mainly composed of the contact resistances of deep and shallow holes, and the resistance of ITO between the deep and shallow holes. Then, by designing the contact holes between metal and ITO in different sizes, Kelvin Four-terminal sensing method is used to measure the relationship between the contact resistances of deep and shallow holes and the hole sizes. Meanwhile, the resistance of ITO between the deep and shallow holes can be calculated by the square resistance and size of ITO between the deep and shallow holes. Therefore, we can calculate the resistance of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole with various structures only according to the hole size and the square resistance of ITO. By analyzing the correlation between the measured and calculated resistance values of a large number of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" holes, the linear correlation coefficient is 0.96, which proves the reliability of the calculation method. Finally, by measuring the resistance values and breakdown current values of a large number of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" holes, a significant power function relationship between the resistance value and breakdown current is found, the power index is around -1.3, and the correlation coefficient is 0.98. Thus, we have established a set of guiding methods about resistance calculation and breakdown current evaluation of "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole quantitatively."}]}]}],"keyword":[{"lang":"zh","data":[[{"name":"text","data":"薄膜晶体管液晶显示器"}],[{"name":"text","data":"氧化铟锡"}],[{"name":"text","data":"过孔"}],[{"name":"text","data":"接触电阻"}],[{"name":"text","data":"击穿电流"}]]},{"lang":"en","data":[[{"name":"text","data":"TFT-LCD"}],[{"name":"text","data":"ITO"}],[{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole"}],[{"name":"text","data":"contact resistance"}],[{"name":"text","data":"breakdown current"}]]}],"highlights":[],"body":[{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"1"}],"title":[{"name":"text","data":"引言"}],"level":"1","id":"s1"}},{"name":"p","data":[{"name":"text","data":"薄膜晶体管液晶显示器(TFT-LCD)已成为目前平板显示的主流产品，相关设计和制造工艺已进入成熟阶段"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"xref","data":{"text":"1","type":"bibr","rid":"b1","data":[{"name":"text","data":"1"}]}},{"name":"text","data":"]"}]},{"name":"text","data":"。薄膜晶体管的配线材料均采用导电性极好的金属材料，如铝、铜。相对于铝，铜具有更低的电阻率、更快的刻蚀速度，目前被广泛使用在中大尺寸TFT-LCD面板中"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"2","type":"bibr","rid":"b2","data":[{"name":"text","data":"2"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"6","type":"bibr","rid":"b6","data":[{"name":"text","data":"6"}]}}],"rid":["b2","b3","b4","b5","b6"],"text":"2-6","type":"bibr"}},{"name":"text","data":"]"}]},{"name":"text","data":"。TFT-LCD面板中不同金属层之间的导通均需通过过孔连接，而连接过孔的材料使用较多的就是氧化铟锡(ITO)。ITO是一种金属氧化物，具有良好的导电性和高的光学透过率，作为透明电极被广泛应用在TFT-LCD中，成为不可或缺的一部分"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"7","type":"bibr","rid":"b7","data":[{"name":"text","data":"7"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"8","type":"bibr","rid":"b8","data":[{"name":"text","data":"8"}]}}],"rid":["b7","b8"],"text":"7-8","type":"bibr"}},{"name":"text","data":"]"}]},{"name":"text","data":"。由于ITO的电阻率比金属材料大2~3个数量级，同时ITO与金属两种不同属性材料的接触界面同样存在着较大的接触电阻，故ITO连接过孔是电信号在传递过程中电阻相对较大的区域，流经电流过大时容易发生过孔烧毁的问题。因此在产品设计中，如何合理设计过孔电阻是提高产品品质的重要课题"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"xref","data":{"text":"9","type":"bibr","rid":"b9","data":[{"name":"text","data":"9"}]}},{"name":"text","data":"]"}]},{"name":"text","data":"。"}]},{"name":"p","data":[{"name":"text","data":"白金超等人研究了铝配线情况下的过孔接触电阻的变化规律，指出了过孔面积、尺寸等因素与接触电阻大小的定性关系，为传统铝工艺下的过孔设计提供了依据"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"xref","data":{"text":"10","type":"bibr","rid":"b10","data":[{"name":"text","data":"10"}]}},{"name":"text","data":"]"}]},{"name":"text","data":"。业内还没有一种可定量计算和设计过孔的方法。而且，目前业内已广泛使用铜配线，辅助层结构与铝配线有所不同，刻蚀特点也有很大差异，铜工艺下的过孔接触电阻规律还需要进一步研究。"}]},{"name":"p","data":[{"name":"text","data":"本文通过对过孔电阻的阻值进行分解，得到并验证了定量计算过孔电阻的方法，阐明了铜工艺下的过孔接触电阻变化规律，同时为复杂的过孔设计提供了一些参考，最后探索了过孔电阻与击穿电流的关系，为合理设计过孔提供了依据。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"2"}],"title":[{"name":"text","data":"实验"}],"level":"1","id":"s2"}},{"name":"p","data":[{"name":"text","data":"实验材料为大尺寸TFT半成品玻璃基板若干。玻璃基板上的成膜顺序依次为栅极金属层(Gate)、栅极绝缘层(GI)、源漏极金属层(Source/Drain，SD)、薄膜晶体管钝化层(PVX)、像素电极层。物理溅射形成钼铌/铜/钼钛(MoNb/Cu/MTD) 15 nm/600 nm/20 nm的Gate层和钼铌/铜(MoNb/Cu) 15 nm/500 nm的SD层金属，以及50 nm ITO的像素电极。等离子增强化学气相沉积氮化硅形成420 nm的GI层和400 nm的PVX层。通过一次干法刻蚀，在PVX层上形成过孔使ITO与SD层金属相连(浅孔)，在GI层和PVX层上同时形成过孔使ITO与Gate层金属相连(深孔)。"}]},{"name":"p","data":[{"name":"text","data":"本文采用Kesight B1500A半导体参数分析仪对样品上具有开尔文四线检测结构的过孔接触电阻进行测试，采用Keithley 2410 1 100 V高压源测量设备对普通过孔电阻和击穿电流进行测试，通过扫描电子显微镜(SEM)、能量色散X射线光谱仪(EDS)和聚焦离子束显微镜(FIB)对过孔内部形貌进行表征。数据的相关性分析采用JMP软件16版进行。文中描述的孔尺寸均为刻蚀后的孔底部尺寸(Final inspection critical dimension，FICD)。"}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"2.1"}],"title":[{"name":"text","data":"过孔电阻的阻值分解"}],"level":"2","id":"s2-1"}},{"name":"p","data":[{"name":"xref","data":{"text":"图 1","type":"fig","rid":"Figure1","data":[{"name":"text","data":"图 1"}]}},{"name":"text","data":"为TFT-LCD常见的ITO连接过孔的截面图。图中①为孔间的ITO平面电阻，②为孔间的ITO斜坡电阻，定义"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"text","data":"为孔间连接的ITO总电阻，包括①和②两部分。③为ITO与金属的接触电阻，其中"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"为深孔接触电阻，"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"s"}]},{"name":"text","data":"为浅孔接触电阻。很明显，电流要从Gate层流到SD层，必须经过①、②、③，因此单过孔电阻的阻值:"}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"1"}],"data":[{"name":"text","data":"        "},{"name":"text","data":"            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ITO"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865570&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865570&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865570&type=middle"}]}},{"name":"p","data":[{"name":"xref","data":{"text":"图 2","type":"fig","rid":"Figure2","data":[{"name":"text","data":"图 2"}]}},{"name":"text","data":"为ITO连接过孔的平面俯视图。"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"text","data":"等于平面电阻与斜坡电阻之和。假设ITO的方块电阻为"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"□"}]},{"name":"text","data":"，深浅孔间的ITO总长度为"},{"name":"italic","data":[{"name":"text","data":"L"}]},{"name":"sub","data":[{"name":"text","data":"R"}]},{"name":"text","data":"，深浅孔间的ITO宽度为"},{"name":"italic","data":[{"name":"text","data":"W"}]},{"name":"text","data":"，则"}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"2"}],"data":[{"name":"text","data":"        "},{"name":"text","data":"            "},{"name":"math","data":{"graphicsData":{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865574&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865574&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865574&type=middle"}}}],"id":"yjyxs-37-1-45-E2"}}]},{"name":"fig","data":{"id":"Figure2","caption":[{"lang":"zh","label":[{"name":"text","data":"图2"}],"title":[{"name":"text","data":"ITO连接过孔平面俯视图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 2"}],"title":[{"name":"text","data":"Top view of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole connected by ITO"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865578&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865578&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865578&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"假设孔边缘的坡度角为"},{"name":"italic","data":[{"name":"text","data":"α"}]},{"name":"text","data":"，深浅孔之间的距离为"},{"name":"italic","data":[{"name":"text","data":"L"}]},{"name":"sub","data":[{"name":"text","data":"F"}]},{"name":"text","data":"，则深浅孔之间的ITO总长度:"}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"3"}],"data":[{"name":"text","data":"        "},{"name":"text","data":"            "},{"name":"math","data":{"graphicsData":{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865582&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865582&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865582&type=middle"}}}],"id":"yjyxs-37-1-45-E3"}}]},{"name":"p","data":[{"name":"text","data":"其中："},{"name":"italic","data":[{"name":"text","data":"T"}]},{"name":"sub","data":[{"name":"text","data":"GI"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"T"}]},{"name":"sub","data":[{"name":"text","data":"PVX"}]},{"name":"text","data":"分别为GI层和PVX层的厚度。"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"s"}]},{"name":"text","data":"为接触电阻，与过孔尺寸相关，没有可用的理论计算公式。我们采用开尔文四线检测法测量设计好的过孔拟合得到接触电阻与过孔尺寸的计算公式。"},{"name":"xref","data":{"text":"图 3","type":"fig","rid":"Figure3","data":[{"name":"text","data":"图 3"}]}},{"name":"text","data":"为具有开尔文四线检测结构的过孔接触电阻图形。"}]},{"name":"fig","data":{"id":"Figure3","caption":[{"lang":"zh","label":[{"name":"text","data":"图3"}],"title":[{"name":"text","data":"具有开尔文四线检测结构的过孔接触电阻图形。(a)深孔；(b)浅孔。"}]},{"lang":"en","label":[{"name":"text","data":"Fig 3"}],"title":[{"name":"text","data":"Pattern of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole contact resistance with Kelvin Four-terminal sensing structure. (a) Deep hole; (b) Shallow hole."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865585&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865585&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865585&type=middle"}]}}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"2.2"}],"title":[{"name":"text","data":"复杂结构过孔的阻值分解"}],"level":"2","id":"s2-2"}},{"name":"p","data":[{"name":"text","data":"在实际的面板设计中，常见到的是多行多列的复杂过孔结构设计。下面分别对3种常见的过孔结构进行阻值分解和说明。"}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"2.2.1"}],"title":[{"name":"text","data":"单排孔设计"}],"level":"3","id":"s2-2-1"}},{"name":"p","data":[{"name":"text","data":"如"},{"name":"xref","data":{"text":"图 4","type":"fig","rid":"Figure4","data":[{"name":"text","data":"图 4"}]}},{"name":"text","data":"所示，单排孔设计是深孔和浅孔各只有一列面对面排列的情况，深孔"},{"name":"italic","data":[{"name":"text","data":"m"}]},{"name":"text","data":"个，浅孔"},{"name":"italic","data":[{"name":"text","data":"n"}]},{"name":"text","data":"个，"},{"name":"italic","data":[{"name":"text","data":"m"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"n"}]},{"name":"text","data":"可以相等也可以不相等。通常多个深孔都是相同设计，多个浅孔也是相同设计，相同设计的孔接触电阻可以认为无差异。"}]},{"name":"fig","data":{"id":"Figure4","caption":[{"lang":"zh","label":[{"name":"text","data":"图4"}],"title":[{"name":"text","data":"单排孔结构的ITO连接过孔电阻图形"}]},{"lang":"en","label":[{"name":"text","data":"Fig 4"}],"title":[{"name":"text","data":"Pattern of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance connected by ITO with single-column structure"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865588&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865588&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865588&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"电流依次流经深孔、ITO和浅孔。深孔接触电阻、ITO连接电阻和浅孔接触电阻之间是串联关系，"},{"name":"italic","data":[{"name":"text","data":"m"}]},{"name":"text","data":"个深孔之间则是并联关系，"},{"name":"italic","data":[{"name":"text","data":"n"}]},{"name":"text","data":"个浅孔之间也是并联关系。单排孔结构的过孔电阻等效电路图如"},{"name":"xref","data":{"text":"图 5","type":"fig","rid":"Figure5","data":[{"name":"text","data":"图 5"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"Figure5","caption":[{"lang":"zh","label":[{"name":"text","data":"图5"}],"title":[{"name":"text","data":"单排孔结构的过孔电阻等效电路图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 5"}],"title":[{"name":"text","data":"Equivalent circuit diagram of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance with single-column structure"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865591&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865591&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865591&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"于是，我们很容易得到单排孔结构的过孔电阻为："}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"4"}],"data":[{"name":"text","data":"        "},{"name":"text","data":"            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6"}]}},{"name":"text","data":"所示，双排孔竖向设计是深孔和浅孔各有两列面对面排列的情况。"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"sup","data":[{"name":"text","data":"′"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"sup","data":[{"name":"text","data":"″"}]},{"name":"text","data":"分别为两排深孔间的ITO连接电阻和两排浅孔间的ITO连接电阻。"}]},{"name":"fig","data":{"id":"Figure6","caption":[{"lang":"zh","label":[{"name":"text","data":"图6"}],"title":[{"name":"text","data":"双排孔竖向结构的ITO连接过孔电阻图形"}]},{"lang":"en","label":[{"name":"text","data":"Fig 6"}],"title":[{"name":"text","data":"Pattern of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance connected by ITO with double-column structure"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865601&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865601&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865601&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"电流依次流经深孔、ITO和浅孔，双排孔竖向结构的过孔电阻等效电路图如"},{"name":"xref","data":{"text":"图 7","type":"fig","rid":"Figure7","data":[{"name":"text","data":"图 7"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"Figure7","caption":[{"lang":"zh","label":[{"name":"text","data":"图7"}],"title":[{"name":"text","data":"双排孔竖向结构的过孔电阻等效电路图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 7"}],"title":[{"name":"text","data":"Equivalent circuit diagram of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance with double-column structure"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865604&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865604&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865604&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"依据电阻的串并联公式，双排孔竖向结构的过孔电阻为："}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"5"}],"data":[{"name":"text","data":"        "},{"name":"text","data":"            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8"}]}},{"name":"text","data":"所示，双排孔横向设计是深孔和浅孔各有两行，深孔两行在外、浅孔两行在内排列的情况。"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"sup","data":[{"name":"text","data":"′"}]},{"name":"text","data":"为两排浅孔间的ITO连接电阻。"}]},{"name":"fig","data":{"id":"Figure8","caption":[{"lang":"zh","label":[{"name":"text","data":"图8"}],"title":[{"name":"text","data":"双排孔横向结构的ITO连接过孔电阻图形"}]},{"lang":"en","label":[{"name":"text","data":"Fig 8"}],"title":[{"name":"text","data":"Pattern of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance connected by ITO with double-row structure"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865611&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865611&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865611&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"同理，双排孔横向结构的过孔电阻等效电路图如"},{"name":"xref","data":{"text":"图 9","type":"fig","rid":"Figure9","data":[{"name":"text","data":"图 9"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"Figure9","caption":[{"lang":"zh","label":[{"name":"text","data":"图9"}],"title":[{"name":"text","data":"双排孔横向结构的过孔电阻等效电路图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 9"}],"title":[{"name":"text","data":"Equivalent circuit diagram of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance with double-row structure"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865614&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865614&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865614&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"依据电阻的串并联公式，双排孔横向结构的过孔电阻为:"}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"6"}],"data":[{"name":"text","data":"        "},{"name":"text","data":"            "},{"name":"math","data":{"graphicsData":{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865616&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865616&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865616&type=middle"}}}],"id":"yjyxs-37-1-45-E6"}}]},{"name":"p","data":[{"name":"text","data":"其中"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"sup","data":[{"name":"text","data":"′"}]},{"name":"text","data":"上下连接点电势相等，无电流经过，等效电路图中可以直接删除。"}]},{"name":"p","data":[{"name":"text","data":"其他复杂类型过孔电阻的计算公式可以通过分析等效电路图同理得到。"}]}]}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"3"}],"title":[{"name":"text","data":"结果与讨论"}],"level":"1","id":"s3"}},{"name":"p","data":[{"name":"text","data":"为了验证上述过孔电阻计算公式的准确性，我们需要计算出各种类型的过孔电阻阻值，然后与实测阻值进行相关性分析。"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"s"}]},{"name":"text","data":"需要测量和拟合得到计算公式，ITO的方块电阻"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"以及过孔的尺寸信息可以通过直接测量得到。"}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"3.1"}],"title":[{"name":"text","data":"深孔和浅孔的接触电阻计算"}],"level":"2","id":"s3-1"}},{"name":"p","data":[{"name":"xref","data":{"text":"表 1","type":"table","rid":"Table1","data":[{"name":"text","data":"表 1"}]}},{"name":"text","data":"是用开尔文四线检测法测量一系列不同孔径的接触电阻阻值。由表中数据可知，随着孔面积的增加，深孔和浅孔的接触电阻均呈明显下降趋势。在孔面积相等的情况下，正方形孔与长方形孔接触电阻几乎一样，且浅孔的接触电阻远大于深孔接触电阻。玻璃中心位置ITO与金属的接触电阻均明显大于玻璃边缘位置，存在位置别差异。"}]},{"name":"table","data":{"id":"Table1","caption":[{"lang":"zh","label":[{"name":"text","data":"表1"}],"title":[{"name":"text","data":"不同大小深孔和浅孔的接触电阻值"}]},{"lang":"en","label":[{"name":"text","data":"Table 1"}],"title":[{"name":"text","data":"Results of contact resistance for deep and shallow holes of different sizes"}]}],"note":[],"table":[{"head":[[{"align":"center","style":"class:table_top_border","data":[{"name":"text","data":"类别"}]},{"align":"center","style":"class:table_top_border","data":[{"name":"text","data":"孔尺寸/"},{"name":"italic","data":[{"name":"text","data":"μ"}]},{"name":"text","data":"m"}]},{"align":"center","style":"class:table_top_border","data":[{"name":"text","data":"玻璃中心/Ω"}]},{"align":"center","style":"class:table_top_border","data":[{"name":"text","data":"玻璃边缘/Ω"}]}]],"body":[[{"rowspan":"8","align":"center","style":"class:table_top_border2 table_bottom_border2","data":[{"name":"text","data":"深孔"},{"name":"text","data":""},{"name":"text","data":"Gate-ITO"}]},{"align":"center","style":"class:table_top_border2","data":[{"name":"text","data":"6×6"}]},{"align":"center","style":"class:table_top_border2","data":[{"name":"text","data":"22.38"}]},{"align":"center","style":"class:table_top_border2","data":[{"name":"text","data":"15.49"}]}],[{"align":"center","data":[{"name":"text","data":"6×7"}]},{"align":"center","data":[{"name":"text","data":"19.4"}]},{"align":"center","data":[{"name":"text","data":"13.35"}]}],[{"align":"center","data":[{"name":"text","data":"6.5×6.5"}]},{"align":"center","data":[{"name":"text","data":"20.05"}]},{"align":"center","data":[{"name":"text","data":"13.08"}]}],[{"align":"center","data":[{"name":"text","data":"7×7"}]},{"align":"center","data":[{"name":"text","data":"17.71"}]},{"align":"center","data":[{"name":"text","data":"11.82"}]}],[{"align":"center","data":[{"name":"text","data":"7×8"}]},{"align":"center","data":[{"name":"text","data":"15.57"}]},{"align":"center","data":[{"name":"text","data":"9.97"}]}],[{"align":"center","data":[{"name":"text","data":"7.5×7.5"}]},{"align":"center","data":[{"name":"text","data":"15.82"}]},{"align":"center","data":[{"name":"text","data":"10.22"}]}],[{"align":"center","data":[{"name":"text","data":"8×8"}]},{"align":"center","data":[{"name":"text","data":"14.42"}]},{"align":"center","data":[{"name":"text","data":"8.98"}]}],[{"align":"center","style":"class:table_bottom_border2","data":[{"name":"text","data":"8×9"}]},{"align":"center","style":"class:table_bottom_border2","data":[{"name":"text","data":"12.99"}]},{"align":"center","style":"class:table_bottom_border2","data":[{"name":"text","data":"7.95"}]}],[{"rowspan":"8","align":"center","style":"class:table_bottom_border","data":[{"name":"text","data":"浅孔"},{"name":"text","data":""},{"name":"text","data":"SD-ITO"}]},{"align":"center","data":[{"name":"text","data":"8.4×8.4"}]},{"align":"center","data":[{"name":"text","data":"21.99"}]},{"align":"center","data":[{"name":"text","data":"11.45"}]}],[{"align":"center","data":[{"name":"text","data":"8.4×9.4"}]},{"align":"center","data":[{"name":"text","data":"18.28"}]},{"align":"center","data":[{"name":"text","data":"9.1"}]}],[{"align":"center","data":[{"name":"text","data":"8.9×8.9"}]},{"align":"center","data":[{"name":"text","data":"17.45"}]},{"align":"center","data":[{"name":"text","data":"9.45"}]}],[{"align":"center","data":[{"name":"text","data":"9.4×9.4"}]},{"align":"center","data":[{"name":"text","data":"16.61"}]},{"align":"center","data":[{"name":"text","data":"7.78"}]}],[{"align":"center","data":[{"name":"text","data":"9.4×10.4"}]},{"align":"center","data":[{"name":"text","data":"14.05"}]},{"align":"center","data":[{"name":"text","data":"6.93"}]}],[{"align":"center","data":[{"name":"text","data":"9.9×9.9"}]},{"align":"center","data":[{"name":"text","data":"13.84"}]},{"align":"center","data":[{"name":"text","data":"6.96"}]}],[{"align":"center","data":[{"name":"text","data":"10.4×10.4"}]},{"align":"center","data":[{"name":"text","data":"12.04"}]},{"align":"center","data":[{"name":"text","data":"5.88"}]}],[{"align":"center","style":"class:table_bottom_border","data":[{"name":"text","data":"10.4×11.4"}]},{"align":"center","style":"class:table_bottom_border","data":[{"name":"text","data":"11.14"}]},{"align":"center","style":"class:table_bottom_border","data":[{"name":"text","data":"5.45"}]}]],"foot":[]}]}},{"name":"p","data":[{"name":"text","data":"将孔面积的倒数与接触电阻值做线性拟合，深孔线性相关系数达到0.99以上，浅孔线性相关系数达到0.98以上，如"},{"name":"xref","data":{"text":"图 10","type":"fig","rid":"Figure10","data":[{"name":"text","data":"图 10"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"Figure10","caption":[{"lang":"zh","label":[{"name":"text","data":"图10"}],"title":[{"name":"text","data":"深孔(a)和浅孔(b)的接触电阻与孔面积的线性拟合曲线"}]},{"lang":"en","label":[{"name":"text","data":"Fig 10"}],"title":[{"name":"text","data":"Linear fitting curves of the contact resistance and the hole area for deep (a) and shallow (b) holes"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865621&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865621&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865621&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"由此，我们得到深孔和浅孔的接触电阻计算公式："}]},{"name":"p","data":[{"name":"dispformula","data":{"label":[{"name":"text","data":"7"}],"data":[{"name":"text","data":"        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12"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"Figure11","caption":[{"lang":"zh","label":[{"name":"text","data":"图11"}],"title":[{"name":"text","data":"深孔和浅孔的扫描电子显微镜图(a)和聚焦离子束显微镜图(b)"}]},{"lang":"en","label":[{"name":"text","data":"Fig 11"}],"title":[{"name":"text","data":"SEM picture of deep and shallow holes(a) and FIB picture(b)"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865642&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865642&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865642&type=middle"}]}},{"name":"fig","data":{"id":"Figure12","caption":[{"lang":"zh","label":[{"name":"text","data":"图12"}],"title":[{"name":"text","data":"深孔和浅孔的EDS结果。(a)浅孔中心；(b)深孔中心；(c)深孔边缘；(d)测试点位。"}]},{"lang":"en","label":[{"name":"text","data":"Fig 12"}],"title":[{"name":"text","data":"EDS results of deep and shallow holes. (a) Shallow hole center; (b) Deep hole center; (c) Deep hole edge; (d)Test point."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865646&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865646&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865646&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"从显微镜图片中可以看出，浅孔边缘非常光滑，而深孔边缘多一个小斜坡，这是由于深孔需要刻蚀PVX和GI两层绝缘层导致的。"}]},{"name":"p","data":[{"name":"text","data":"栅极金属Cu上方还有MTD层，源漏极金属Cu上方没有其他膜层。结合"},{"name":"xref","data":{"text":"图 12","type":"fig","rid":"Figure12","data":[{"name":"text","data":"图 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14"}]}},{"name":"text","data":"为两组单排孔正对与非正对设计的阻值对比。从图中可以看出，孔两端金属线正对与非正对设计对整体过孔电阻无影响，设计时可灵活采用。"}]},{"name":"fig","data":{"id":"Figure14","caption":[{"lang":"zh","label":[{"name":"text","data":"图14"}],"title":[{"name":"text","data":"单排孔正对与非正对的阻值对比。(a)正对；(b)非正对；(c)中心位置阻值对比；(d)边缘位置阻值对比。"}]},{"lang":"en","label":[{"name":"text","data":"Fig 14"}],"title":[{"name":"text","data":"Comparison between the resistance values of the direct and non-direct "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole with single-column. 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(a) ITO wide; (b) ITO narrow; (c) Comparison of the center position resistance; (d) Comprison of the edge position resistance."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865656&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865656&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865656&type=middle"}]}}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"3.3.3"}],"title":[{"name":"text","data":"双排孔竖向设计"}],"level":"3","id":"s3-3-3"}},{"name":"p","data":[{"name":"xref","data":{"text":"图 16","type":"fig","rid":"Figure16","data":[{"name":"text","data":"图 16"}]}},{"name":"text","data":"为3组竖向双排孔与单排孔的阻值对比。每组内包含4种过孔，组内单孔尺寸和深浅孔间距均相同，只是深浅孔的列数不同。从图中可以看出，竖向双排孔(a)与单排孔(b)没有明显的阻值差异。"}]},{"name":"fig","data":{"id":"Figure16","caption":[{"lang":"zh","label":[{"name":"text","data":"图16"}],"title":[{"name":"text","data":"竖向双排孔与单排孔的阻值对比。(a)双排深浅孔；(b)单排深浅孔；(c)双排深孔单排浅孔；(d)单排深孔双排浅孔；(e) 中心位置阻值对比；(f) 边缘位置阻值对比。"}]},{"lang":"en","label":[{"name":"text","data":"Fig 16"}],"title":[{"name":"text","data":"Comparison between the resistance values of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole with double- column and single-column. (a) Double-column deep and shallow holes; (b) Single-column deep and shallow holes; (c) Double-column deep holes and single-column shallow holes; (d) Single-column deep holes and double-column shallow holes; (e) Comparison of the center position resistance; (f) Comparison of the edge position resistance."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865658&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865658&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865658&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"从公式(4)和(5)可以看出，双排孔竖向过孔电阻仅比单排孔的过孔电阻小"},{"name":"inlineformula","data":[{"name":"math","data":{"graphicsData":{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865669&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865669&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865669&type=middle"}}}]},{"name":"text","data":"+"},{"name":"inlineformula","data":[{"name":"math","data":{"graphicsData":{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865672&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865672&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865672&type=middle"}}}]},{"name":"text","data":"。这里"},{"name":"italic","data":[{"name":"text","data":"m"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"n"}]},{"name":"text","data":"均为4，"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"sup","data":[{"name":"text","data":"′"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"ito"}]},{"name":"sup","data":[{"name":"text","data":"″"}]},{"name":"text","data":"通常都大于"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"s"}]},{"name":"text","data":"，故双排孔竖向过孔电阻仅比单排孔的过孔电阻最多小1/24("},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"+"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"s"}]},{"name":"text","data":")。同时通过"},{"name":"xref","data":{"text":"表 3","type":"table","rid":"Table3","data":[{"name":"text","data":"表 3"}]}},{"name":"text","data":"和"},{"name":"xref","data":{"text":"表 4","type":"table","rid":"Table4","data":[{"name":"text","data":"表 4"}]}},{"name":"text","data":"可以看出，"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"d"}]},{"name":"text","data":"和"},{"name":"italic","data":[{"name":"text","data":"R"}]},{"name":"sub","data":[{"name":"text","data":"s"}]},{"name":"text","data":"通常较小，故此差值非常小(不到1 Ω)，与实测结果一致。故在相同孔径下，双排孔竖向设计对整体过孔电阻无明显贡献，空间有限时采用单排孔设计即可。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"3.3.4"}],"title":[{"name":"text","data":"双排孔横向设计"}],"level":"3","id":"s3-3-4"}},{"name":"p","data":[{"name":"xref","data":{"text":"图 17","type":"fig","rid":"Figure17","data":[{"name":"text","data":"图 17"}]}},{"name":"text","data":"为两组横向双排孔与单排孔的阻值对比。每组内包含4种过孔，组内单孔尺寸和深浅孔间距均相同，只是深浅孔的行数不同。横向双排孔(a)的阻值约等于单排孔(b)阻值的1/2。"}]},{"name":"fig","data":{"id":"Figure17","caption":[{"lang":"zh","label":[{"name":"text","data":"图17"}],"title":[{"name":"text","data":"横向双排孔与单排孔的阻值对比。(a)双排深浅孔；(b)单排深浅孔；(c)双排深孔单排浅孔；(d)单排深孔双排浅孔；(e) 中心位置阻值对比；(f) 边缘位置阻值对比。"}]},{"lang":"en","label":[{"name":"text","data":"Fig 17"}],"title":[{"name":"text","data":"Comparison between the resistance values of the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole with double-row and single-column. (a) Double-row deep and shallow holes; (b) Single-row deep and shallow holes; (c) Double-row deep holes and single-row shallow holes; (d) Single-row deep holes and double-row shallow holes; (e) Comparison of the center position resistance; (f) Comparison of the edge position resistance."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865662&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865662&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865662&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"从公式(4)和(6)可以看出，横向双排孔的阻值等于单排孔阻值的1/2，与实测值基本一致。同时，(d)排列的过孔电阻与横向双排孔阻值相当。说明增加浅孔的行数对过孔电阻没有明显贡献。故在双排孔横向设计时建议采用两行深孔一行浅孔。"}]}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"3.4"}],"title":[{"name":"text","data":"过孔电阻与击穿电流"}],"level":"2","id":"s3-4"}},{"name":"p","data":[{"name":"text","data":"我们还进一步探索了过孔击穿电流与过孔阻值之间的关系。我们测量了42组过孔电阻和它的击穿电流值，分别用幂函数和焦耳公式进行拟合，结果如"},{"name":"xref","data":{"text":"图 18","type":"fig","rid":"Figure18","data":[{"name":"text","data":"图 18"}]}},{"name":"text","data":"所示。"}]},{"name":"fig","data":{"id":"Figure18","caption":[{"lang":"zh","label":[{"name":"text","data":"图18"}],"title":[{"name":"text","data":"过孔电阻与击穿电流的关系。(a)幂指数拟合；(b)焦耳公式拟合。"}]},{"lang":"en","label":[{"name":"text","data":"Fig 18"}],"title":[{"name":"text","data":"Relationship between the "},{"name":"italic","data":[{"name":"text","data":"via"}]},{"name":"text","data":" hole resistance and breakdown current. (a) Power exponent fitting; (b) Jole formula fitting."}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865665&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865665&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23865665&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"过孔烧毁通常被认为是过孔电阻产生的焦耳热过大导致过孔结构发生破坏导致的，按照焦耳定律就是过孔电阻与击穿电流的倒数存在二次方的关系。从"},{"name":"xref","data":{"text":"图 18(a)","type":"fig","rid":"Figure18","data":[{"name":"text","data":"图 18(a)"}]}},{"name":"text","data":"幂函数拟合情况来看，拟合出的幂指数为-1.327，介于1和2之间，相关系数达到0.98。按照"},{"name":"xref","data":{"text":"图 18(b)","type":"fig","rid":"Figure18","data":[{"name":"text","data":"图 18(b)"}]}},{"name":"text","data":"焦耳定律拟合的函数，电流倒数的平方为非负数，则过孔电阻不低于17.68 Ω，这显然是不合理的，且相关系数不到0.96。因此幂函数关系更为显著，推测过孔电阻与击穿电流之间可能存在着一次方和二次方关系的综合影响。我们可通过这个幂函数公式推算出过孔的击穿电流大小。"}]}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"4"}],"title":[{"name":"text","data":"结论"}],"level":"1","id":"s4"}},{"name":"p","data":[{"name":"text","data":"本文首先研究了ITO接触电阻并拟合得到了深孔和浅孔的接触电阻计算公式，同时阐明了铜工艺下的过孔接触电阻的不同规律，MTD金属能够明显改善铜与ITO的接触电阻。然后对ITO连接过孔电阻进行详细的分解，推导了多种结构过孔电阻的计算方法，并利用实测数据验证了计算方法的可靠性，相关系数达到0.96。针对不同结构的过孔，通过实测数据对比分析，提出了一些过孔相关的设计建议：过孔两端金属正对与非正对设计对电阻大小没影响；ITO宽的过孔电阻较小；双排孔竖向设计时深孔或浅孔列数的增加对电阻基本没贡献；双排孔横向设计时浅孔行数的增加对电阻基本没贡献。最后，探索了过孔电阻阻值与击穿电流的幂函数关系，幂指数为-1.3，相关系数达到0.98。自此，我们建立起了一整套可定量计算过孔电阻及其击穿电流的方法，为合理设计过孔提供了依据。"}]}]}],"footnote":[],"reflist":{"title":[{"name":"text","data":"参考文献"}],"data":[{"id":"b1","label":"1","citation":[{"lang":"zh","text":[{"name":"text","data":"        "},{"name":"text","data":"\t   "},{"name":"text","data":" "},{"name":"text","data":"廖 燕平"},{"name":"text","data":"\t   "},{"name":"text","data":", "},{"name":"text","data":" "},{"name":"text","data":"宋 勇志"},{"name":"text","data":"\t   "},{"name":"text","data":", "},{"name":"text","data":" "},{"name":"text","data":"邵 喜斌"},{"name":"text","data":"\t  "},{"name":"text","data":", "},{"name":"text","data":"等"},{"name":"text","data":"          "},{"name":"text","data":"          "},{"name":"text","data":". 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