{"defaultlang":"zh","titlegroup":{"articletitle":[{"lang":"zh","data":[{"name":"text","data":"RIE模式干法刻蚀ADS产品铝腐蚀改善研究"}]},{"lang":"en","data":[{"name":"text","data":"Improvement of aluminum corrosion of ADS products by RIE etching mode dry etching"}]}]},"contribgroup":{"author":[{"name":[{"lang":"zh","surname":"蒋","givenname":"会刚","namestyle":"eastern","prefix":""},{"lang":"en","surname":"JIANG","givenname":"Hui-gang","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":["corresp","first-author"],"corresp":[{"rid":"cor1","lang":"zh","text":"蒋会刚, E-mail:jianghuigang@boe.com.cn","data":[{"name":"text","data":"蒋会刚, E-mail:jianghuigang@boe.com.cn"}]}],"bio":[{"lang":"zh","text":["蒋会刚(1987-), 男, 黑龙江牡丹江人, 毕业于北京工商大学, 本科生, 现就职于BOEOT, 高级工程师, 主要从事TFT-LCD干法刻蚀相关工作."],"graphic":[],"data":[[{"name":"text","data":"蒋会刚(1987-), 男, 黑龙江牡丹江人, 毕业于北京工商大学, 本科生, 现就职于BOEOT, 高级工程师, 主要从事TFT-LCD干法刻蚀相关工作."}]]}],"email":"jianghuigang@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"高","givenname":"建剑","namestyle":"eastern","prefix":""},{"lang":"en","surname":"GAO","givenname":"Jian-jian","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"bio":[{"lang":"zh","text":["高建剑(1987-), 男, 山西阳泉人, 毕业于北京化工大学, 本科生, 现就职于BOEOT, 高级工程师, 主要从事TFT-LCD干法刻蚀相关工作, E-mail:gaojianjian@boe.com.cn"],"graphic":[],"data":[[{"name":"text","data":"高建剑(1987-), 男, 山西阳泉人, 毕业于北京化工大学, 本科生, 现就职于BOEOT, 高级工程师, 主要从事TFT-LCD干法刻蚀相关工作, E-mail:"},{"name":"text","data":"gaojianjian@boe.com.cn"}]]}],"email":"gaojianjian@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"王","givenname":"晏酩","namestyle":"eastern","prefix":""},{"lang":"en","surname":"WANG","givenname":"Yan-ming","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"bio":[{"lang":"zh","text":["王晏酩(1981-), 男, 北京人, 毕业于北京大学, 本科生, 现就职于BOEOT, 资深高级工程师, 主要从事TFT-LCD刻蚀相关工作, E-mail:wangyanming@boe.com.cn"],"graphic":[],"data":[[{"name":"text","data":"王晏酩(1981-), 男, 北京人, 毕业于北京大学, 本科生, 现就职于BOEOT, 资深高级工程师, 主要从事TFT-LCD刻蚀相关工作, E-mail:"},{"name":"text","data":"wangyanming@boe.com.cn"}]]}],"email":"wangyanming@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"赵","givenname":"海生","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHAO","givenname":"Hai-sheng","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"bio":[{"lang":"zh","text":["赵海生(1981-), 男, 辽宁北票人, 毕业于中国石油大学, 本科生, 现就职于BOEOT, 资深高级工程师, 主要从事TFT-LCD阵列检测相关工作, E-mail:zhaohaisheng@boe.com.cn"],"graphic":[],"data":[[{"name":"text","data":"赵海生(1981-), 男, 辽宁北票人, 毕业于中国石油大学, 本科生, 现就职于BOEOT, 资深高级工程师, 主要从事TFT-LCD阵列检测相关工作, E-mail:"},{"name":"text","data":"zhaohaisheng@boe.com.cn"}]]}],"email":"zhaohaisheng@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"王","givenname":"辉","namestyle":"eastern","prefix":""},{"lang":"en","surname":"WANG","givenname":"Hui","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"bio":[{"lang":"zh","text":["王辉(1981-), 男, 北京人, 毕业于北京工业大学, 本科生, 现就职于BOEOT, 资深高级工程师, 主要从事TFT-LCDArray相关工作, E-mail:wanghui_ot@boe.com.cn"],"graphic":[],"data":[[{"name":"text","data":"王辉(1981-), 男, 北京人, 毕业于北京工业大学, 本科生, 现就职于BOEOT, 资深高级工程师, 主要从事TFT-LCDArray相关工作, E-mail:"},{"name":"text","data":"wanghui_ot@boe.com.cn"}]]}],"email":"wanghui_ot@boe.com.cn","deceased":false},{"name":[{"lang":"zh","surname":"吴","givenname":"超","namestyle":"eastern","prefix":""},{"lang":"en","surname":"WU","givenname":"Chao","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"bio":[{"lang":"zh","text":["吴超(1982-), 男, 吉林双辽人, 毕业于中南大学, 本科生, 现就职于BOEOT, 高级工程师, 主要从事TFT-LCD生产工作, E-mail:wuchao_ot@boe.com.cn"],"graphic":[],"data":[[{"name":"text","data":"吴超(1982-), 男, 吉林双辽人, 毕业于中南大学, 本科生, 现就职于BOEOT, 高级工程师, 主要从事TFT-LCD生产工作, E-mail:"},{"name":"text","data":"wuchao_ot@boe.com.cn"}]]}],"email":"wuchao_ot@boe.com.cn","deceased":false}],"aff":[{"id":"aff1","intro":[{"lang":"zh","label":"","text":"北京京东方光电科技有限公司, 北京 100176","data":[{"name":"text","data":"北京京东方光电科技有限公司, 北京 100176"}]},{"lang":"en","label":"","text":"Beijing BOE Optoelectronics Technology Co., Ltd, Beijing, 100176, China","data":[{"name":"text","data":"Beijing BOE Optoelectronics Technology Co., Ltd, Beijing, 100176, China"}]}]}]},"abstracts":[{"lang":"zh","data":[{"name":"p","data":[{"name":"text","data":"Full-in-cell（FIC）产品信号线SD层结构为Mo-Al-Mo结构，使用Reactive Ion Etching（RIE）模式干法刻蚀设备进行N+ Etch时，氯的化合物会吸附在信号线中的Al线侧壁及光刻胶的表面，当玻璃基板离开刻蚀腔体接触到空气，遇到水分发生水解反应，对Al线造成腐蚀，严重影响产品特性。本文在RIE刻蚀模式腔体内采用刻蚀条件变更改善Al腐蚀现象，通过对刻蚀的前处理步骤，后处理步骤以及去静电步骤的参数包括压强、功率和时间以及气体流量比进行实验设计并对数据进行分析。实验结果表明当后处理步骤2 000 W，O"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"/SF"},{"name":"sub","data":[{"name":"text","data":"6"}]},{"name":"text","data":"比例为2 000 mL·min"},{"name":"sup","data":[{"name":"text","data":"-1"}]},{"name":"text","data":"/50 mL·min"},{"name":"sup","data":[{"name":"text","data":"-1"}]},{"name":"text","data":", 压强为200 mt（1 mt=0.133 Pa），Time为15 s为最优条件，可以彻底改善Al腐蚀现象。此条件TFT特性方面更加优越，Dark "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"on"}]},{"name":"text","data":"为1.91 "},{"name":"italic","data":[{"name":"text","data":"μ"}]},{"name":"text","data":"A，Photo "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"off"}]},{"name":"text","data":"为4.1 pA。"}]}]},{"lang":"en","data":[{"name":"p","data":[{"name":"text","data":"Full-in-cell (FIC) product signal line SD-layer is Mo-Al-Mo structure, when using Reactive Ion Etching (RIE) mode dry etching device for N + etching, the chlorine compounds absorbed on the side wall surface of the Al and photoresist line, when the glass substrate is etched away from the chamber exposed to air, the moisture encountered hydrolysis reaction, which will cause corrosion of Al wire and seriously affect the product characteristics. In this paper, the Al etching phenomenon is improved by changing the etching conditions in the RIE etching mode cavity. Related experimental design and data analysis of the parameters of the pretreatment step, the post-treatment step and the de-static step including the pressure, power and time and the gas ratio is discussed. The experimental results show that the Al corrosion can be improved when the post-treatment step is 2 000 W, the ratio of O"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"/SF"},{"name":"sub","data":[{"name":"text","data":"6"}]},{"name":"text","data":" is 2 000 mL·min"},{"name":"sup","data":[{"name":"text","data":"-1"}]},{"name":"text","data":"/50 mL·min"},{"name":"sup","data":[{"name":"text","data":"-1"}]},{"name":"text","data":", the pressure is 200 mt and the time is 15 s. This condition is more advantageous in terms of TFT characteristics, Dark "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"on"}]},{"name":"text","data":" is 1.91 "},{"name":"italic","data":[{"name":"text","data":"μ"}]},{"name":"text","data":"A, Photo "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"off"}]},{"name":"text","data":" is 4.1 pA."}]}]}],"keyword":[{"lang":"zh","data":[[{"name":"text","data":"铝腐蚀"}],[{"name":"text","data":"TFT沟道"}],[{"name":"text","data":"TFT特性"}],[{"name":"text","data":"沟道厚度"}]]},{"lang":"en","data":[[{"name":"text","data":"aluminum corrosion"}],[{"name":"text","data":"TFT channel"}],[{"name":"text","data":"TFT characteristics"}],[{"name":"text","data":"channel thickness"}]]}],"highlights":[],"body":[{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"1"}],"title":[{"name":"text","data":"引言"}],"level":"1","id":"s1"}},{"name":"p","data":[{"name":"text","data":"伴随薄膜晶体管液晶显示器(TFT-LCD)的不断发展，人们日益追求更加轻薄化的面板，触摸面板和液晶面板的一体化主要采用Full-in-cell方法。Full-in-cell是指将触摸面板功能嵌入到液晶像素中的方法，即在显示屏内部嵌入触摸传感器功能，这样能使屏幕变得更加轻薄。由于Full-in-cell产品对TFT的电学特性要求更高，采用MO-Al-MO的结构设计，由于现有RIE干法刻蚀模式设备的局限性，刻蚀气体只有SF"},{"name":"sub","data":[{"name":"text","data":"6"}]},{"name":"text","data":"，Cl"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"，O"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"，He，以及ADS产品的特殊设计，在进行TFT沟道的欧姆接触层刻蚀时，氯的化合物会吸附在信号线中的Al线侧壁及光刻胶的表面，当玻璃基板离开刻蚀腔体后，Al线侧壁中的氯化合物接触点空气的水分发生水解反应，对Al线造成腐蚀，严重影响产品特性"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"1","type":"bibr","rid":"b1","data":[{"name":"text","data":"1"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"4","type":"bibr","rid":"b4","data":[{"name":"text","data":"4"}]}}],"rid":["b1","b2","b3","b4"],"text":"1-4","type":"bibr"}},{"name":"text","data":"]"}]},{"name":"text","data":"。本文通过研究RIE刻蚀模式设备的特性，对Al线腐蚀结构及机理的分析，来解决该类产品结构的Al线腐蚀问题。本研究采用刻蚀条件处理步骤的变更改善Al腐蚀现象，通过对刻蚀的前处理步骤，后处理步骤以及去静电步骤的参数包括压强、功率和时间以及气体流量比进行实验设计进而彻底改善Al腐蚀现象的发生"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"5","type":"bibr","rid":"b5","data":[{"name":"text","data":"5"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"6","type":"bibr","rid":"b6","data":[{"name":"text","data":"6"}]}}],"rid":["b5","b6"],"text":"5-6","type":"bibr"}},{"name":"text","data":"]"}]},{"name":"text","data":"，进而提升Full-in-cell产品TFT特性。本研究在解决Al线腐蚀的同时，对产品特性也取得较大提升。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"2"}],"title":[{"name":"text","data":"实验原理"}],"level":"1","id":"s2"}},{"name":"p","data":[{"name":"text","data":"本文采用RIE模式Dry Etching机台对TFT Channel进行刻蚀，刻蚀气体为SF"},{"name":"sub","data":[{"name":"text","data":"6"}]},{"name":"text","data":"，Cl"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"，O"},{"name":"sub","data":[{"name":"text","data":"2"}]},{"name":"text","data":"，He，刻蚀步骤分为BT(前处理步骤)、Main Etch(主刻蚀步骤)、AT(后处理步骤)和Discharge(去静电步骤)。本文通过对BT步骤、AT步骤以及Discharge步骤的参数包括压强、功率和时间以及气体流量比进行实验设计"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"blockXref","data":{"data":[{"name":"xref","data":{"text":"7","type":"bibr","rid":"b7","data":[{"name":"text","data":"7"}]}},{"name":"text","data":"-"},{"name":"xref","data":{"text":"10","type":"bibr","rid":"b10","data":[{"name":"text","data":"10"}]}}],"rid":["b7","b8","b9","b10"],"text":"7-10","type":"bibr"}},{"name":"text","data":"]"}]},{"name":"text","data":"，研究不同条件对Al腐蚀的改善情况，并且进一步提升TFT特性。对各个实验设计的条件，通过光学检测设备对Al腐蚀不良进行检测验证改善效果，通过电学特性测试设备YAF5000对样品的TFT特性进行测试与评估，通过K-MAC设备测试TFT沟道厚度，整体验证TFT特性的趋势及Al腐蚀改善效果。"}]},{"name":"p","data":[{"name":"text","data":"光学检测设备：图案检查，指对经过Array各工序后形成的具有规定图案的基板的检查，设备利用光学性方法检查LCD玻璃基板上的图案是否存在异常的设备。"}]},{"name":"p","data":[{"name":"text","data":"光学检测目的：以光学的方式对TFT Pattern进行全面系统检查，并进行反馈，最终实现检出不良，提高良率的目的。光学方式检查，用发光元件及感光元件在基板上方扫过，无接触式的完成检查。"}]},{"name":"p","data":[{"name":"text","data":"测试原理：经过物体表面反射后的光会携带物体表面的某些信息，如颜色、形状、凸凹程度、透明程度等，那么用计算机分析这些光信息就会再现物体。"}]},{"name":"fig","data":{"id":"Figure1","caption":[{"lang":"zh","label":[{"name":"text","data":"图1"}],"title":[{"name":"text","data":"Al腐蚀现象表面SEM图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 1"}],"title":[{"name":"text","data":"Al corrosion phenomenon surface SEM image"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596691&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596691&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596691&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"电学特性测试设备YAF5000：TFT-LCD前工序TFT基板完成后的检测设备，通过对有代表性的TFT器件电学参数的测量对Array工艺形成的TFT阵列的电学特性进行整体评估。做法是把信号线Head接触到栅极Pad上，栅极Head接触到栅极Pad上，Pixel Head接触到Pixel中间的ITO上，温度及光照强度都可以进行调整，本实验通过YAF5000测试设备测出对应TFT的阈值电压"},{"name":"italic","data":[{"name":"text","data":"V"}]},{"name":"sub","data":[{"name":"text","data":"th"}]},{"name":"text","data":"、工作电流Dark "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"on"}]},{"name":"text","data":"、高温光照漏电流"},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"off"}]},{"name":"text","data":"、迁移率"},{"name":"italic","data":[{"name":"text","data":"μ"}]},{"name":"text","data":"以及相应的"},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"text","data":"-"},{"name":"italic","data":[{"name":"text","data":"V"}]},{"name":"text","data":"曲线，从而找出各测试条件对电学特性的影响，这样就可以有效评估处理步骤对高温光照漏电流的影响，通过测试数据可有效反应出添加处理步骤对界面态缺陷的改善效果。"}]},{"name":"fig","data":{"id":"Figure2","caption":[{"lang":"zh","label":[{"name":"text","data":"图2"}],"title":[{"name":"text","data":"Al腐蚀现象截面SEM图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 2"}],"title":[{"name":"text","data":"Al corrosion phenomenon sectional SEM image"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596709&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596709&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596709&type=middle"}]}},{"name":"fig","data":{"id":"Figure3","caption":[{"lang":"zh","label":[{"name":"text","data":"图3"}],"title":[{"name":"text","data":"Al腐蚀现象光学检测图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 3"}],"title":[{"name":"text","data":"Al corrosion phenomenon optical detection image"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596726&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596726&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596726&type=middle"}]}},{"name":"fig","data":{"id":"Figure4","caption":[{"lang":"zh","label":[{"name":"text","data":"图4"}],"title":[{"name":"text","data":"Al腐蚀显微镜图"}]},{"lang":"en","label":[{"name":"text","data":"Fig 4"}],"title":[{"name":"text","data":"Al corrosion phenomenon microscope image"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596875&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596875&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1596875&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"沟道厚度测试设备：K-MAC: Korea Materials and Analysis Corporation，K-MAC设备理论基础主要是基于测量材质相对稳定的材料，不同波长的光的反射率大小对应于材料的不同厚度。"}]},{"name":"p","data":[{"name":"text","data":"测试原理：K-MAC的光源是钨-卤光源(Tungsten-Halogen Light Source)，根据波长出现互补干涉或相消干涉，从而测量的反射光根据薄膜厚度的不同，出现Sin 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4","type":"table","rid":"Table4","data":[{"name":"text","data":"表 4"}]}},{"name":"text","data":"的测试结果来看，样品1(初始条件)为Al腐蚀现象最严重的初始条件，改善样品22, 24, 26 TFT特性得到了更好的优化，样品24为特性最优条件，Photo "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"off"}]},{"name":"text","data":"下降明显，Dark "},{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"sub","data":[{"name":"text","data":"on"}]},{"name":"text","data":"以及沟道厚度与初始样品持平。"}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"4.3"}],"title":[{"name":"italic","data":[{"name":"text","data":"I"}]},{"name":"text","data":"-"},{"name":"italic","data":[{"name":"text","data":"V"}]},{"name":"text","data":"曲线图"}],"level":"2","id":"s4-3"}},{"name":"p","data":[{"name":"text","data":"样品24的样品TFT 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