{"defaultlang":"zh","titlegroup":{"articletitle":[{"lang":"zh","data":[{"name":"text","data":"电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述"}]},{"lang":"en","data":[{"name":"text","data":"Description about electric field-induced new order reconstruction in a nanoconfined HAN cell"}]}]},"contribgroup":{"author":[{"name":[{"lang":"zh","surname":"陈","givenname":"思博","namestyle":"eastern","prefix":""},{"lang":"en","surname":"CHEN","givenname":"Si-bo","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":["first-author"],"bio":[{"lang":"zh","text":["陈思博(1992-),男,河北廊坊人,硕士研究生,从事液晶物理方面的学习和研究。E-mail:chensibo1992@163.com"],"graphic":[],"data":[[{"name":"text","data":"陈思博(1992-),男,河北廊坊人,硕士研究生,从事液晶物理方面的学习和研究。E-mail:"},{"name":"text","data":"chensibo1992@163.com"}]]}],"email":"chensibo1992@163.com","deceased":false},{"name":[{"lang":"zh","surname":"王","givenname":"永超","namestyle":"eastern","prefix":""},{"lang":"en","surname":"WANG","givenname":"Yong-chao","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"周","givenname":"璇","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHOU","givenname":"Xuan","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":[],"deceased":false},{"name":[{"lang":"zh","surname":"张","givenname":"志东","namestyle":"eastern","prefix":""},{"lang":"en","surname":"ZHANG","givenname":"Zhi-dong","namestyle":"western","prefix":""}],"stringName":[],"aff":[{"rid":"aff1","text":""}],"role":["corresp"],"corresp":[{"rid":"cor2","lang":"zh","text":"E-mail:zhidong_zhang1961@163.com","data":[{"name":"text","data":"E-mail:zhidong_zhang1961@163.com"}]}],"email":"zhidong_zhang1961@163.com","deceased":false}],"aff":[{"id":"aff1","intro":[{"lang":"zh","label":"","text":"河北工业大学 理学院, 天津 300401","data":[{"name":"text","data":"河北工业大学 理学院, 天津 300401"}]},{"lang":"en","label":"","text":"Department of Applied Physics, School of Sciences, Hebei University of Technology, Tianjin 300401 China","data":[{"name":"text","data":"Department of Applied Physics, School of Sciences, Hebei University of Technology, Tianjin 300401 China"}]}]}]},"abstracts":[{"lang":"zh","data":[{"name":"p","data":[{"name":"text","data":"基于Landau-de Gennes理论，利用松弛迭代的方法，研究了包含-1/2向错线的混合排列（HAN）液晶盒中，平行于向错线的电场所诱导的结构转变。结果表明，盒厚固定时，电场诱导五种结构转变过程；电场固定时，盒厚变化产生三类结构转变方式。力曲线上的极小值确定了液晶系统发生结构转变的临界盒厚。"}]}]},{"lang":"en","data":[{"name":"p","data":[{"name":"text","data":"Based on the Landau-de Gennes theory, with the relaxation iterative method, we investigated the electric field-induced structure transition in a nanoconfined HAN cell with -1/2 topological defect, where the electric field is parallel to the disclination line. Our results show that with fixed cell gaps, five new structure transition processes are induced by electric field; while cell gap variation leads to three transition modes for an applied electric field. The critical value of cell gap corresponding to the structure transition is characterized by the local minimum in the force curve."}]}]}],"keyword":[{"lang":"zh","data":[[{"name":"text","data":"有序重构"}],[{"name":"text","data":"Landau-de Gennes理论"}],[{"name":"text","data":"-1/2向错"}],[{"name":"text","data":"力曲线"}]]},{"lang":"en","data":[[{"name":"text","data":"order reconstruction"}],[{"name":"text","data":"Landau-de Gennes theory"}],[{"name":"text","data":"-1/2 defect"}],[{"name":"text","data":"force curve"}]]}],"highlights":[],"body":[{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"1"}],"title":[{"name":"text","data":"引 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gap"}]}],"subcaption":[],"note":[],"graphics":[{"print":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1594064&type=","small":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1594064&type=small","big":"http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=1594064&type=middle"}]}},{"name":"p","data":[{"name":"text","data":"当"},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"=0.5时，系统的结构转变状态仍为第一类结构转变。随着盒厚"},{"name":"italic","data":[{"name":"text","data":"d"}]},{"name":"text","data":"的继续增大，缺陷态成为系统的唯一状态。此时，力曲线在"},{"name":"italic","data":[{"name":"text","data":"d"}]},{"name":"text","data":"=6.5ξ"},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"处出现极小。"}]},{"name":"p","data":[{"name":"text","data":"当"},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"=1.0时，力曲线在"},{"name":"italic","data":[{"name":"text","data":"d"}]},{"name":"text","data":"=7.4ξ"},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"处出现极小。当盒厚继续增大时，液晶分子之间的相互作用力不足以抵抗电场力，将出现指向矢扭曲现象，液晶分子沿着电场方向排列。我们将上述结构转变方式统称为第二类结构转变。"}]},{"name":"p","data":[{"name":"text","data":" "},{"name":"xref","data":{"text":"表 1","type":"table","rid":"Table1","data":[{"name":"text","data":"表 1"}]}},{"name":"text","data":"给出，"},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"=2.0时系统的转变方式发生改变，由体有序重构态直接转变到表面有序重构态，中间不经过缺陷态或双稳态。此时，力曲线在"},{"name":"italic","data":[{"name":"text","data":"d"}]},{"name":"text","data":"=6.9"},{"name":"italic","data":[{"name":"text","data":"ξ"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"处出现极小。我们将这种结构转变方式称为第三类结构转变。 三类结构转变过程与电场的关系总结于"},{"name":"xref","data":{"text":"表 2","type":"table","rid":"Table2","data":[{"name":"text","data":"表 2"}]}},{"name":"text","data":"。"}]},{"name":"table","data":{"id":"Table2","caption":[{"lang":"zh","label":[{"name":"text","data":"表2"}],"title":[{"name":"text","data":"三类结构转变过程与电场的关系"}]},{"lang":"en","label":[{"name":"text","data":"Table 2"}],"title":[{"name":"text","data":"Three process of structural transition for different "},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":" values"}]}],"note":[],"table":[{"head":[[{"data":[{"name":"text","data":"电场范围"}]},{"data":[{"name":"text","data":"形变方式"}]}]],"body":[[{"data":[{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"=0"}]},{"data":[{"name":"text","data":"体有序重构态-缺陷态"}]}],[{"data":[{"name":"text","data":"0"},{"name":"text","data":"<"},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"<"},{"name":"text","data":"2.0("},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"=0.5、"},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"sub","data":[{"name":"text","data":"0"}]},{"name":"text","data":"=1.0)"}]},{"data":[{"name":"text","data":"体有序重构态-缺陷态—扭曲态"}]}],[{"data":[{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"text","data":"≥2.0("},{"name":"italic","data":[{"name":"text","data":"E/E"}]},{"name":"text","data":"=2.0)"}]},{"data":[{"name":"text","data":"体有序重构态-表面有序重构态"}]}]],"foot":[]}]}}]}]},{"name":"sec","data":[{"name":"sectitle","data":{"label":[{"name":"text","data":"5"}],"title":[{"name":"text","data":"结 论"}],"level":"1","id":"s5"}},{"name":"p","data":[{"name":"text","data":"基于Landau-de Gennes理论"},{"name":"sup","data":[{"name":"text","data":"["},{"name":"xref","data":{"text":"8","type":"bibr","rid":"b8","data":[{"name":"text","data":"8"}]}},{"name":"text","data":"]"}]},{"name":"text","data":"，研究了包含-1/2缺陷的HAN液晶盒的结构转变过程与电场、盒厚的关系。通过松弛迭代的方法，解出平衡态时的序参数张量，进而得出系统双轴性、本征值及指向矢的分布特征。基于先前得出的在外电场E平行施加于线缺陷方向时，液晶系统出现新型的有序重构现象的结论基础上，本文从两个不同的角度研究结构转变，得出五种不同的新型结构转变以及三类变化方式:固定盒厚，改变电场强度，研究表明在不同的盒厚下出现五种结构转变方式，缺陷的扩散以及有序重构是这五种现象出现的直接原因。由于缺陷的扩散以及有序重构的发生，液晶系统的能量也发生改变。固定电场，逐渐增加盒厚，表现出三类结构转变方式。力曲线中的极小值正好对应液晶系统发生结构转变的临界盒厚。"}]}]}],"footnote":[],"reflist":{"title":[{"name":"text","data":"参考文献"}],"data":[{"id":"b1","label":"1","citation":[{"lang":"en","text":[{"name":"text","data":"JEONG J,DAVIDSON Z S,COLLINGS P J,et al.Chiral symmetry breaking and surface faceting in chromonic liquid crystal droplets with giant elastic 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2014,41(9):1219-1228."}]}]}]},"response":[],"contributions":[],"acknowledgements":[],"conflict":[],"supportedby":[],"articlemeta":{"doi":"10.3788/YJYXS20163109.0853","clc":[[{"name":"text","data":"O753.2"}]],"dc":[],"publisherid":"yjyxs-31-9-853","citeme":[],"fundinggroup":[{"lang":"zh","text":[{"name":"text","data":"国家自然科学基金（No.11374087）"}]},{"lang":"en","text":[{"name":"text","data":"Supported by the Natural Science Foundation of China(No.11374087)"}]}],"history":{"received":"2016-04-06","accepted":"2016-05-23","opub":"2020-06-15"},"copyright":{"data":[{"lang":"zh","data":[{"name":"text","data":"版权所有 © 《液晶与显示》编辑部 2016"}],"type":"copyright"},{"lang":"en","data":[{"name":"text","data":"Copyright © 2016 Chinese Journal of Liquid Crystals and Displays. All rights reserved."}],"type":"copyright"}],"year":"2016"}},"appendix":[],"type":"research-article","ethics":[],"backSec":[],"supplementary":[],"journalTitle":"液晶与显示","issue":"9","volume":"31","originalSource":[]}