Mechanism research and improvement of TFT-LCD white dot

Xin LIU; Yu-jie GAO; Kun GUO; Zhi YANG; Shi CHENG; Hong-tao LIN; Da-long MAO; Zi-mo SHENG; Jian ZHAO; Wei WU; Hui-bin GUO; Peng JIANG

doi:10.37188/CJLCD.2020-0153

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Mechanism research and improvement of TFT-LCD white dot

Device Physics and Device Preparation | 更新时间：2021-03-23

- Mechanism research and improvement of TFT-LCD white dot
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 3, Pages: 405-411(2021)
- 作者机构：
  
  1.武汉京东方光电科技有限公司, 湖北武汉 430040
  2.北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.37188/CJLCD.2020-0153
  CLC： TN873.93;TN321.5
- Received：13 June 2020，
  
  Accepted：07 October 2020，
  
  Published：2021-03
- 稿件说明：
移动端阅览
Xin LIU, Yu-jie GAO, Kun GUO, et al. Mechanism research and improvement of TFT-LCD white dot[J]. Chinese journal of liquid crystals and displays, 2021, 36(3): 405-411.
DOI：

Xin LIU, Yu-jie GAO, Kun GUO, et al. Mechanism research and improvement of TFT-LCD white dot[J]. Chinese journal of liquid crystals and displays, 2021, 36(3): 405-411. DOI： 10.37188/CJLCD.2020-0153.

摘要

TFT基板四道掩膜版工艺可提升产能，但其带来的产品品质困扰着各工厂，白点不良即为四道掩膜版工艺产生。本文通过直流实验探究了白点产生的原因；采用光照实验和高温实验，研究了白点产生的机理，同时利用工艺调整来改善白点不良。结果表明，有源层膜质存在异常，其导电性不同导致了反冲电压（Δ

）的差异，最佳公共电压的不同形成白点不良。栅极和源极耦合电容越小，即硅边宽度越小，白点越少，直至消失。子像素存储电容越大，钝化层厚度（PVX）由600 nm减小到400 nm，白点不良程度可减轻1个等级。通过工艺调整，将硅边宽度降低到1.2 μm，可解决四道掩膜版工艺导致的白点问题。该研究对于产品品质和收益的提升以及后续产品开发提供了有效的解决方法及参考。

Abstract

The 4 mask process of TFT substrate can improve production capacity

but it also brings the problemsin product quality. For example

the 4 mask process can generate white dot defects. The causes of white dots is explored through DC experiment. The mechanism of white dots is studied by illumination experiment and high temperature experiment

and the white dots defects are improved by process adjustment. The mechanism of white dots defects is that the conductivity of active layer is different due to SW effect

resulting in different feedthrough voltage (Δ

)

and the difference of optimal

com

leads to white dots defects. With the gate and drain electrode signal coupling capacitance

becaming smaller (

i.e.

the smaller active tail width)

the white dots gradually decrease until they disappear. With the pixel storage capacitor

becoming larger

the insulation layer thickness (PVX) is reduced from 600 nm to 400 nm

and the degree of white dots defects can be reduced by 1 level. After the process adjustment

the width of active tail is reduced to 1.2 μm

which can solve the white dots problem caused by 4 mask process. This work provides effective solutions and references for the improvement of product quality and benefits as well as subsequent product development.

关键词

Keywords

references

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Xin LIU

Yu-jie GAO

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Chongqing BOE Optoelectronis Technology Co. Ltd.

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